Deposition and characterization of a- and μc-Si:H thin films by ICP-CVD system with internal antennas

Nanocrystalline Si:H films made by inductively coupled plasma using internal low inductance antenna

“…This is similar to what was shown and explained in Ref. [11] where both the plasma density and the generation of SiH n , H n and Si n were studied and thus co-related. In addition, a smaller working distance (i.e., a higher plasma density, as shown by the square symbols) seems to shift its S curve to higher values of X c , and to a higher power level for "fastrising", although possibly with a worse film uniformity, too.…”

“…Details of the system were reported elsewhere [11][12][13]. Four vertically displaced U-shaped LIAs, arrayed in a scalable manner, were installed in the vacuum chamber at optimal positions to increase the plasma uniformity over an area of 30 Â 30 cm 2 .…”

“…Four vertically displaced U-shaped LIAs, arrayed in a scalable manner, were installed in the vacuum chamber at optimal positions to increase the plasma uniformity over an area of 30 Â 30 cm 2 . Since the plasma characteristics of this ICP-CVD system have been identified previously [11], our focus here is to verify the applicability of this system to deposit nc-Si:H films with a suppressed defect density, judged by Hall measurement, and an enhanced deposition rate by systematically adjusting the processing parameters including hydrogen dilution and discharge power.…”

A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

“…Yang et al measured the intensity of ( ) by optical emission spectra (OES) and demonstrate first increases then decreases [ 19 ]. According to previous plasma diagnoses reports, the intensity of indicates the amount of atomic hydrogen [ 20 , 21 ]. Thus, the density of H in the plasma first increases then decreases when the deposition pressure continues increasing.…”

“…The crystallinity is not only affected by the atomic hydrogen but also influenced by the content of growth precursor SiH n ( n = 1,2,3, mainly n = 3) which can be indicated by SiH * in OES measurement [ 21 , 22 ]. Hsieh et al have demonstrated that / I SiH ∗ (the intensity ratio / SiH * ) increases with the deposition pressure [ 20 ]. It is generally accepted that / I SiH ∗ is the index for X c , i.e., X c increases with the increase of / I SiH ∗ [ 21 , 23 ].…”