A macroscopic shape memory effect is demonstrated by first deforming a CeO2‐stabilized tetragonal zirconia polycrystal (Ce‐TZP) between the Mb and As temperatures and then recovering the shape change by heating above Ab. Shape changes effected above Ab are immediately recoverable during unloading, giving rise to a pseudoelastic behavior. Deformation texture is reversible when the shape strain recovers. Both Mb and Ab, along with the associated temperature range for these effects, are depressed to lower temperatures by grain refinement. Prior deformation widens the gap between the transformation temperatures. These observations demonstrate that the shape accommodation in Ce‐TZP arises from twinning and elastic distortions. The operation of pseudoelasticity and shape memory effect is rationalized in terms of martensitic nucleation statistics, the stability of thermoelastic martensite, and internal stresses at the martensitic interface. The implications on transformation plasticity and transformation toughening are explored.

High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows ones to deposit high quality thin films in comparison with conventional magnetron sputtering technology. The present short review on HiPIMS intends to provide readers with a summary of the current status of this emerging PVD technique: the developmental history, the plasma characterization, and the applications in hardness and functional thin film fabrications. Several items on the distinctive feature of HiPIMS, including self-sputtering mechanism, low deposition rate, arcing phenomenon and key factors of deposition process are reviewed in detail. To limit the scope, the emphasis is put on thermo-chromic VO2 thin film deposited by HiPIMS. Based on this typical issue, some classical ideas and approaches on fabrication of the functional thin films through HiPIMS technique are demonstrated.

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