Recent progress on high power impulse magnetron sputtering (HiPIMS): The challenges and applications in fabricating VO2 thin film

Cherng, J.S.; Chen, Qiang

doi:10.1063/1.5084031

Cited by 31 publications

(17 citation statements)

References 82 publications

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“…In this paper, the fabrication of epitaxial GeSn layers by using high power impulse MS (HiPI-MS) is reported for the first time. Higher crystalline quality of epitaxial GeSn is obtained by HiPI-MS in comparison to the conventional RF-MS method, in agreement with published results for other materials . Heterostructures of epitaxial GeSn alloys and GeSn NCs embedded in oxide matrix are obtained by one run of MS deposition, and the formation of p–n heterojunctions is given by the intrinsic layer properties.…”

Section: Introductionsupporting

confidence: 88%

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Dascalescu

Zoita

Slav

et al. 2020

ACS Appl. Mater. Interfaces

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GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge1–x Sn x )1–y (SiO2) y layers and subsequent rapid thermal annealing at a low temperature of 400 °C. Intrinsic GeSn structural defects give p-type behavior, while the presence of oxygen leads to the n-character of the embedded GeSn NCs. Such an embedded NCs/epitaxial GeSn p–n heterostructure shows superior photoelectrical response up to 3 orders of magnitude increase in the 1.2–2.5 μm range, as compared to performances of diode based only on embedded NCs.

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Section: Introductionsupporting

confidence: 88%

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Dascalescu

Zoita

Slav

et al. 2020

ACS Appl. Mater. Interfaces

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“…Rezek et al [ 42 ] observed that resistivity significantly decreases with increasing pulsed-averaged target power density up to 950 W/cm 2 as a result of decreasing the grain size in film microstructure. In other studies, the bias voltages were frequently applied to the substrate to control the electron bombardment momentum and thus, to improve the film properties [ 63 ]. Since the negative ion energy depend strongly on the self-bias, it is stated that negative oxygen ions are one of the factors significantly influencing thin film properties [ 64 ].…”

Section: Resultsmentioning

confidence: 99%

High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

2021

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High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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“…The surface was observed more uniform with an average height of the grain at around 2 nm. In Sample A , droplets still exist as the DC and HiPIMS sometimes having an arching phenomenon if the stable plasma not achieved (Zhang et al , 2019). However, the heat assistance was observed to help to reduce the effect of droplets as shown in Sample B .…”

Section: Resultsmentioning

confidence: 99%

“…Another type of magnetron sputtering called high-power impulse magnetron sputtering (HiPIMS) introduced in 1991 that uses the pulse power plasma discharge (Kouznetsov et al , 1999). HiPIMS known to generate a high plasma density as the high degree of ionization achieved due to peak power that exceeded the time-average power (Zhang et al , 2019). The high degree of ionization resulting a dense and smooth surface of thin-film as compared to DC and RF reactive sputtering.…”

Section: Introductionmentioning

confidence: 99%

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Azman

Nayan

Hasnan

et al. 2021

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PurposeThis study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approachHiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. FindingsThe XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/valueThe small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.

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Recent progress on high power impulse magnetron sputtering (HiPIMS): The challenges and applications in fabricating VO2 thin film

Cited by 31 publications

References 82 publications

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

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