Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

Abstract

Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO 2 /Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 • C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2-2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

Surface modification of battery electrodes via electroless deposition with improved performance for Na-ion batteries

“…Surface modification of electrodeposited Ge in 0.1 M SbCl 3 -[Py 1,4 ]TFSI for 10 minutes led to the formation of Sb A1g vibration mode at 150 cm À1 and a broad peak at 225 cm À1 which relates to the longitudinal optical (LO) phonon vibration of Ge x Sb 1Àx . [24][25][26] Upon heat treatment of the sample to 300 1C in vacuum, it is evident from Fig. 1c that there is a shift in the Ge peak by 11 cm À1 and the LO phonon vibration peak becomes prominent which confirms the formation of Ge x Sb 1Àx .…”

Monocrystalline Antimonene Nanosheets via Physical Vapor Deposition

“…35-0732) suggesting a trigonal/rhombohedral structure. [38][39][40][41] The FL-Sb peaks shift from the bulk antimony is due to the increase in the interplanar spacing. [39] This also reinforces that any minuscule oxygen (which appears in the Raman spectroscopy in Figure 3a) present on the surface has not altered the crystallinity of the material.…”

High Reliability and Fast‐Speed Phase‐Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

“…As shown in Figure 2, the 10-year data retention and E a of SbSe/SiO multilayer lms increase with the SiO thickness ratio, which indicate that SbSe/SiO multilayer lm has the best reliability and is more quali ed for PCM application. e di use re ectivity spectra of SbSe thin lm and SbSe/SiO multilayer thin lms were measured by NIR spectrophotometry in the wavelength ranging from 400 to 2500 nm at room temperature [21]. e bandgap energy (E g ) could be determined by extrapolating the absorption edge onto the energy axis, as shown in Figure 3.…”