2018
DOI: 10.1155/2018/9693015
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High Reliability and Fast‐Speed Phase‐Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

Abstract: Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer co… Show more

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Cited by 3 publications
(2 citation statements)
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“…26 Higher annealing temperatures expose the grains to compressive stress, reduce bond lengths and increase bond energies, indicating stronger interatomic forces and enhanced stability. 27 Due to the electrode-film interface influenced by the induced stress during the phase change process, 28 30 and it will reduce the grain size and produce more grain boundaries. More grain boundaries have been reported to affect carrier transport, increasing the crystalline resistivity and lowing power consumption in RESET.…”
Section: Resultsmentioning
confidence: 99%
“…26 Higher annealing temperatures expose the grains to compressive stress, reduce bond lengths and increase bond energies, indicating stronger interatomic forces and enhanced stability. 27 Due to the electrode-film interface influenced by the induced stress during the phase change process, 28 30 and it will reduce the grain size and produce more grain boundaries. More grain boundaries have been reported to affect carrier transport, increasing the crystalline resistivity and lowing power consumption in RESET.…”
Section: Resultsmentioning
confidence: 99%
“…8 In present, the most widely used phase change material is Ge 2 Sb 2 Te 5 (GST) because of its commercial application in optical storage. 9 However, the thermal stability of Ge 2 Sb 2 Te 5 is relatively poor and the RESET power consumption is too high to meet the requirement for high-density storage. 10 Therefore, it is necessary to develop new phase change materials.…”
mentioning
confidence: 99%