Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

Navamathavan, R.; Jung, An Soo; Kim, Hyun Seung; Jang, Young Jun; Choi, Chi Kyu; Lee, Kwang-Man

doi:10.3938/jkps.50.1803

Cited by 6 publications

(4 citation statements)

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“…Whereas the resistance is aected by the conducting materials, the capacitance is mainly determined by the dielectric materials [11]. Therefore, thin lms with relatively low dielectric constants (k < 3.0) are under intense study due to their applications as interlayer dielectrics for multilevel metallization of ultralarge-scale integrated (ULSI) semiconductor devices [12]. A low-k value is one of the most important requirements for interlayer dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Cho¹,

Bae²,

Boo³

et al. 2008

J. Korean Phy. Soc.

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Plasma-polymer pure ethylcyclohexane thin lms were deposited on Si(100) substrates at room temperature by using PECVD (plasma enhanced chemical vapor deposition). Hydrogen and argon gases were used as precursor bubbler and carrier gases, respectively. We also investigated the electrical and the physical properties of the plasma-polymer thin lms at various deposition RF powers and annealing temperatures. The as-grown and the annealed plasma-polymer thin lms were analyzed by using FT-IR (Fourier transform infrared spectroscopy) and SEM (scanning electron microscopy). The IR spectra showed that the plasma-polymer thin lms had totally dierent chemical functionalities from those of the ethylcyclohexane precursor and that the chemical functionalities of the thin lms changed with the RF power and annealing temperature. From the SEM results, we determined the thicknesses of the thin lms before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images. An impedance analyzer was used to measure the capacitance and from the electrical property measurements, the lowest dielectric constant obtained was 1.71.

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Section: Introductionmentioning

confidence: 99%

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Cho¹,

Bae²,

Boo³

et al. 2008

J. Korean Phy. Soc.

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“…On the other hand, the SiOC film due to the low polarization has good properties in view of the mechanical, electrical and thermal stability, because the C-H bond elongation effect also reduces the ionic polarization in SiOC film. The amorphous structure owing to the reduction of polarizations decreases the polarization and dielectric constant in SiOC film [5,6]. The precursor in SiOC film by CVD is also an important issue [7,8].…”

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confidence: 99%

Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

2010

Phys. Status Solidi (c)

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SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film had the main Si‐O‐C bond with the molecule vibration mode in the range of 930∼1230 cm‐1 which consists of C‐O and Si‐O bonds related to the cross link formation according to the dissociation and recombination. The C‐O bond originated from the elongation effect by the neighboring highly electronegative oxygen atoms at terminal C‐H bond in Si‐CH3 of 1270 cm‐1. However, the Si‐O bond was formed from the second ionic sites recombined after the dissociation of Si‐CH3 of 1270 cm‐1. Increment of Si‐O bond in the Si‐O‐C main bond contributed to increase the hardness and decrease the roughness because of the decreasing of the carbon content witch is related to the space effect. The dielectric constant of SiOC film was decreased by lowering the polarization which consists of the ionic and electronic polarity. Increment of Si‐O bond in a right shoulder at the main bond was interpreted by the red shift observed in FTIR spectra. Moreover, the increment of Si‐O bond and decrement of carbon content induced to decrease the ionic polarity and then decreased the dielectric constant. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…However, many manufacturers have chosen a chemical vapor deposition (CVD) approach for k < 2 5 and extendability of the CVD path. 23 The main objective study is to investigate the process integration with porous low k dielectrics (PLD 2.2). We introduce a porous ultra low-k material (k ∼ 2 2) in single and dual damascene Cu structure using a top hard mask integration approach.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ashing Conditions and Optimization of Nano Process Integration in Copper/Porous Low-k Nano-Interconnects

Pyo

Kim²

2012

j nanosci nanotechnol

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We report the optimization of ashing conditions and the process integration of a chemical vapor deposition (CVD) ultra low-k (k = 2.2) organosilicate (OSG) dielectric in a top hard mask damascene structure. The N2/H2 ash showed the lowest resistance-capacitance (RC) product and a dual top hard mask approach for dual damascene processing was built, using 200 nm SiC/50 nm SiO2 as the hard mask. This CVD low-k material had no low-k voiding, unlike other spin-on dielectric (SOD) low-k materials. The presence of the densified layer around the trench during the ashing process could improve the precursor penetration during the CVD barrier metal deposition process.

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Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

Cited by 6 publications

References 0 publications

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Study on the Plasma-Polymer Thin Films Deposited by Using PECVD and Application Tests for Low-k Insulator

Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

Effect of Ashing Conditions and Optimization of Nano Process Integration in Copper/Porous Low-k Nano-Interconnects

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