A simple seed-layer assisted electro-deposition SLAE route has been successfully used to prepare a Cu 2 O film with a significant improvement in the crystalline quality, compactness and surface texture. This improvement was confirmed by studying the photo-luminescence emission properties and Raman spectroscopy of the Cu 2 O films grown with and without the SLAE route. The hall measurements reveal the enhancement in the hole mobility from 3.8 cm 2 /V s for the Cu 2 O films grown without using the SLAE route compared to 45 cm 2 /V s for the films grown by using the SLAE route. A detailed analysis of the J-V characteristics curve of the p-Cu 2 O/n-Si heterojunctions was performed. The dark J-V curves reveal the formation of p-n junction behavior. The photovoltaic parameters of p-Cu 2 O/n-Si heterojunctions exhibit an improvement in the p-Cu 2 O/n-Si solar cell efficiency from 0.05 to 0.31 % due to the adoption of the SLAE route.