1995
DOI: 10.1557/proc-410-323
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Deposition And Characterization Of Silicon And Carbon Nitride

Abstract: We attempted to deposit carbon nitride films on flat Si (111) substrates and on sharp <111>-oriented silicon needles in a radio frequency (rf) inductively coupled plasma system utilizing a graphite source and a nitrogen plasma. The resultant polycrystalline films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Auger electron spectroscopy (AES), and electron energy loss spectroscopy (EELS). Both selected area electron diffraction (SAED) and lattice imaging… Show more

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“…[6][7][8] Currently diamond and diamondlike films are intensively investigated because of their apparent negative electron affinity. Carbon has been investigated as an emitter material because of its surface inertness and high thermal stability.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8] Currently diamond and diamondlike films are intensively investigated because of their apparent negative electron affinity. Carbon has been investigated as an emitter material because of its surface inertness and high thermal stability.…”
Section: Introductionmentioning
confidence: 99%