Deposition and DC electrical characterisation of rf magnetron sputtered silicon nitride thin films

Gould, R.D.; Awan, S.A.

doi:10.1016/j.tsf.2005.12.285

Cited by 7 publications

(6 citation statements)

References 29 publications

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“…Most studies concluded that the conduction mechanisms in thin SiN x films are bulk-controlled [17,23,24], while some have found indications for space-charge-limited conduction (SCLC) [25], or field emission [26].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

et al. 2015

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Section: Accepted Manuscriptmentioning

confidence: 99%

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

et al. 2015

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“…[6][7][8][9] Silicon nitride films can be prepared by a variety of methods such as low-pressure chemical vapor deposition (LPCVD), 10,11 plasma-enhanced CVD (PECVD), 12,13 pulsed laser ablation, 14 reactive evaporation, 15 and sputtering. 16,17 Conventionally, high-quality stoichiometric silicon nitride films are obtained by the LPCVD process at temperatures in excess of 700°C. To realize MEMS on the same silicon chip, it is a requirement to integrate the control electronic circuits, usually based on complementary metaloxide-semiconductor (CMOS) technology, with the sensor/actuator/mirror fabrication processing.…”

Section: Introductionmentioning

confidence: 99%

“…Many researchers have reported the deposition of silicon nitride by the RF-sputtering process. [16][17][18][19][20] Silicon nitride deposited by LPCVD and PECVD is widely used as a structural material in the fabrication of different MEMS devices, such as static membranes, tunable inductors, and tunable MEMS Fabry-Pérot optical filters. [6][7][8][9]21,22 However, sputtered silicon nitride has not yet been explored as a structural layer in MEMS.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Bhatt

Chandra

2009

Journal of Elec Materi

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In the present work, we report silicon nitride films deposited by a radiofrequency (RF) sputtering process at relatively low temperatures (<260°C) for microelectromechanical system (MEMS) applications. The films were prepared by RF diode sputtering using a 3-inch-diameter Si 3 N 4 target in an argon ambient at 5 mTorr to 20 mTorr pressure and an RF power of 100 W to 300 W. The influence of the film deposition parameters, such as RF power and sputtering pressure, on deposition rate, Si-N bonding, surface roughness, etch rate, and stress in the films was investigated. The films were deposited on single/double-side polished silicon wafers and transparent fused-quartz substrates. To explore the RF-sputtered silicon nitride film as a structural material in MEMS, microcantilever beams of silicon nitride were fabricated by bulk, surface, and surface-bulk micromachining technology. An RF-sputtered phosphosilicate glass film was used as a sacrificial layer with RF-sputtered silicon nitride. Other applications of sputtered silicon nitride films, such as in the local oxidation of silicon (LOCOS) process, were also investigated.

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“…Silicon nitride is of significant technical interest due to its extensive use in microelectronic device fabrication as passivation layer, as oxidation or diffusion barrier, and as inter-level isolation layer. 3,4 The development of metal-nitride-oxide semiconductor (MNOS) technology for the fabrication of nonvolatile memories in the late 1960s stimulated the use of Si 3 N 4 in semiconductor devices and integrated circuits. 5 It is used in non-volatile memories, as a protective coating and as a substitute for SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of ultraviolet photodetectors based on silicon nitride nanostructures prepared by magnetron sputtering

Hammadi

Khalaf²,

Kadhim

2015

Proceedings of the Institution of Mechanical Engineers, Part N:

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In this work, ultraviolet photodetectors have been fabricated by depositing silicon nitride nanoparticles on a p-type silicon substrate by closed-field unbalanced dual magnetron sputtering technique. The structural characteristics of silicon nitride have been identified through X-ray diffraction and scanning electron microscopy. Ultraviolet-visible transmission and absorption spectra of the silicon nitride thin films have been recorded. The maximum spectral responsivities of these photodetectors have been measured. The results show that these photodetectors have quantum efficiencies between 0.421 and 0.479 and specific detectivity up to 2.33 3 10 11 cm W 21 Hz 21 at 10 kHz. Accordingly, silicon nitride can be considered as an applicable candidate for ultraviolet photodetectors.

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Deposition and DC electrical characterisation of rf magnetron sputtered silicon nitride thin films

Cited by 7 publications

References 29 publications

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Fabrication and characterization of ultraviolet photodetectors based on silicon nitride nanostructures prepared by magnetron sputtering

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