Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Dergez, D.; Schneider, Michael; Bittner, A.; Schmid, Ulrich

doi:10.1016/j.tsf.2015.05.028

Cited by 18 publications

(14 citation statements)

References 29 publications

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“…The compressive residual stress decreases with increasing pressure, eventually flipping over gradually to tensile (26 MPa) at high process pressures. Such behavior is typical for sputtered thin films and has been reported for several materials …”

Section: Resultssupporting

confidence: 72%

“…Such behavior is typical for sputtered thin films and has been reported for several materials. [30][31][32] Hardness and reduced modulus values were obtained from their depth profiles, measured using the CSM, and were extracted from contact depth of 10% and 5% of the film thickness, respectively. It is evident that the film hardness is strongly connected to the process pressure, see The effect of magnetron power on mechanical properties of the films is only moderate, see Table 2.…”

Section: Optical Propertiesmentioning

confidence: 99%

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Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

Šimurka¹,

Čtvrtlík

Роч

et al. 2018

Int J of Appl Glass Sci

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Silicon oxynitride layers have been widely used to tailor the optical performance and mechanical resistance of multilayer optical coatings. The key issue for their reliable large‐scale application on a glass substrate is the effect of technological parameters on their performance. Here we report on the interrelationship between the conditions of the reactive magnetron deposition process and composition, structure and in turn optical and mechanical properties. The process gas composition and pressure level exhibit a strong influence on the film properties, whereas only moderate effect of magnetron power was observed. The O/(O+N) ratio of the films changes from 0.33 to 0.90 and the film density varies between 2.66 g.cm−3 and 1.85 g.cm−3 along with the increase in the process gas pressure from 0.58 Pa to 1.02 Pa. The refractive index shifts between 1.81 and 1.48 and the residual stress of the film varies in the range from compressive (−385 MPa) to tensile (26 MPa). Hardness and reduced modulus follow the same trend and decline with the increase in process pressure from 12.1 GPa to 2.1 GPa and from 120.3 to 31.6 GPa, respectively. The abrasive wear resistance decreases with the nitrogen content in the films.

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Section: Resultssupporting

confidence: 72%

Section: Optical Propertiesmentioning

confidence: 99%

Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

Šimurka¹,

Čtvrtlík

Роч

et al. 2018

Int J of Appl Glass Sci

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“…Most common applications for sputtered SiN x films consist primarily of a barrier/passivation coating and etch stop in microelectromechanical systems (MEMS); 74,116 high refractive index material for solar cells, 25 through-Si vias for three-dimensional (3D) semiconductor devices, electroluminescent devices, and display devices; 25,31 and high κ dielectric layer in stacked high-dielectric constant (κ) structures for non-volatile memory (NVM) devices. 75 A unique application is as a host material for Si nanocrystals as active light emitters for uses in PL and optoelectronic devices.…”

Section: Physical Vapor Deposition (Pvd)mentioning

confidence: 99%

“…DC or RF magnetron sputtering were the deposition techniques of choice for PVD, although the deposition rates for RF magnetron sputtered SiN x were significantly lower than their DC counterparts. 74,116 Furthermore, the DC magnetron sputtered SiN x films exhibited superior chemical and physical properties than their RF magnetron sputtered analogs, while displaying equivalent electrical characteristics in MEMS devices.…”

Section: Physical Vapor Deposition (Pvd)mentioning

confidence: 99%

“…Alternatively, in another report, the N/Si ratio in SiN x films was controlled by employing RF Magnetron sputtering to produce Si-rich films, and PE-CVD to yield N-rich films. 74 A pertinent report 25 compared the properties of SiN x films grown by RF magnetron sputtering and PE-CVD at low temperature. The resulting findings indicated that sputtering was more appropriate than PE-CVD in yielding higher quality SiN x films with enhanced density, with the lower density in the PE-CVD coatings being attributed to the inclusion of hydrogen (due to the lower processing temperature employed).…”

Section: Ecs Journal Of Solid State Science and Technology 6 (10) P6mentioning

confidence: 99%

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Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

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This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

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Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.

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Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

Cited by 18 publications

References 29 publications

Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

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