Deposition and electrical characterization of hafnium oxide films on silicon

Abstract

Hohe Enantioselektivitäten (bis zu 98 % ee) werden bei der 1,4‐Addition von Diethylzink an acyclische Enone erzielt, wenn die CuI‐Komplexe neuartiger chiraler P,N‐Liganden 1 als Katalysatoren eingesetzt werden. Die besten Ergebnisse erhält man in unpolaren Lösungsmitteln wie Toluol oder Cl(CH2)2Cl mit [Cu(OTf)]2⋅C6H6 als Katalysatorvorstufe. R=H, CH3; Tf=F3CSO2.

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

“…Nevertheless, further increasing the temperature to 1000°C, the oxide capacitance was lowered. This suggested that an IL with lower k than the La x Ce y O z was formed at the interface with silicon [44]. This was in agreement with the HRTEM results, which implied the formation of SiO x and silicates IL in the 1000°C-annealed sample [38].…”

“…Lim · Z. Lockman · K.Y. Cheong [3][4][5], ZrO 2 [6,7], HfO 2 [8][9][10], La 2 O 3 [11][12][13][14], Y 2 O 3 [15][16][17], and CeO 2 [18][19][20]. Among the aforementioned high-k oxides, La 2 O 3 is the most unstable oxide due to its hygroscopic nature to form La(OH) 3 upon reaction with ambient water [14,21,22].…”

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

“…In this regime, unacceptably large leakage currents and reliability concerns accelerate substantial effort in searching for a gate oxide with higher dielectric constant (k) than SiO 2 (k=3.9), allowing the utilization of physically thick gate oxide with electrically equivalent oxide thickness (EOT). Numerous high-k gate oxides, such as Al 2 O 3 [2][3][4], ZrO 2 [5][6], and HfO 2 [7][8][9] have been employed on Si substrate. Al 2 O 3 is also a promising candidate for replacing SiO 2 .…”

“…Al 2 O 3 is also a promising candidate for replacing SiO 2 . However, its k value of about [8][9][10] [] has limited its utilization as a high-k gate oxide. Attention has thus shifted to using HfO 2 and ZrO 2 .…”