Deposition and Evaluation of Highly Crystallized Ta<sub>2</sub>O<sub>5</sub> Piezoelectric Thin Film on Pt Crystal Film

Matsuura, Keiichi; Suzuki, Masashi; Kakio, Shoji; Kodera, Masanori; Funakubo, Hiroshi

doi:10.1109/ius54386.2022.9957543

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(2 citation statements)

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“…We examined the epitaxial growth of single-crystal Ta 2 O 5 films on platinum (Pt) crystal films deposited on Si substrates because the lattice constant of Pt is close to that of orthorhombic β-Ta 2 O 5 19) with piezoelectricity. 26) In addition, by utilizing high-density Pt, we can expect the concentration of particle displacement of SAWs, which leads to an enhancement of K 2 . We simulated the SAW resonance properties of an X-axis-oriented Ta 2 O 5 thin film deposited on a Pt/Si substrate.…”

Section: Introductionmentioning

confidence: 99%

“…We simulated the SAW resonance properties of an X-axis-oriented Ta 2 O 5 thin film deposited on a Pt/Si substrate. 26) In this paper, the examination methods and results are described in detail. Moreover, the result of examining the epitaxial growth of single-crystal Ta 2 O 5 thin films on strontium ruthenate (SrRuO 3 : SRO) substrates (SRO/Pt/Si substrates) is also described.…”

Section: Introductionmentioning

confidence: 99%

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Deposition and evaluation of Ta₂O₅ piezoelectric thin film on Pt crystal film

Matsuura

Suzuki

Kakio

et al. 2022

Jpn. J. Appl. Phys.

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Tantalum pentoxide (Ta2O5) thin films were deposited on Pt(100)/Si(100) and SrRuO3(SRO)/Pt(100)/Si(100) substrates using an RF magnetron sputtering system. From the evaluated orientation and piezoelectricity of the deposited thin films, it was clarified that the Ta2O5 thin films were crystallized to λ-Ta2O5 without piezoelectricity on the Pt/Si substrates and to β-Ta2O5 with piezoelectricity on the SRO/Pt/Si substrates. The electromechanical coupling factor k t 2 of the deposited film containing β-Ta2O5 was measured to be 0.36% from the response of a high-overtone bulk acoustic resonator, whereas that of the deposited film containing λ-Ta2O5 was measured to be 0.03%. Furthermore, the enhancement of the electromechanical coupling factor of surface acoustic waves (SAWs) by adding a high-density Pt intermediate layer was clarified from the resonance property simulated by the finite element method. This enhancement was due to the distributed particle displacement of the SAWs throughout the Ta2O5 thin film.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%