effects on the photoluminescence of terbium doped zinc oxide films. Thin Solid Films, Elsevier, 2014Elsevier, , 553, pp.52-57. 10.1016Elsevier, /j.tsf.2013 Annealing effects on the photoluminescence of terbium doped zinc oxide films Terbium doped zinc oxide (Tb:ZnO) films were deposited by radio frequency magnetron sputtering on (100) single-crystalline silicon substrates at low temperature (T S = 100°C). In this work, structural changes, optical properties and the associated photoluminescence (PL) responses are analyzed upon the annealing treatments. Post-annealing treatments from annealing temperature T a = 400°C up to 1000°C by steps of 100°C were performed. Chemical analyses by energy dispersive X-ray spectrometry measurements showed a constant dopant concentration of 3 at.%. Up to 600°C, the band gaps (E g ) decreased with T a from 3.44 down to 3.37 eV. Above 600°C, the band gap raised from 3.37 up to 3.42 eV (for 900°C). Depending on T a , a bi-axial stress was found varying from a compressive value of −0.21 GPa (400°C) down to a tensile value of 0.05 GPa (1000°C). PL mechanisms of the Tb:ZnO film are then discussed.