Deposition and properties of B–N codoped p-type ZnO thin films by RF magnetron sputtering

Sui, Yongming; Ye, Bin; Yang, Jing; Cui, Haining; Huang, Xiaohui; Yang, Tao; Gao, Lu; Deng, Rui; Shen, Dezhen

doi:10.1016/j.apsusc.2009.11.017

Cited by 13 publications

(5 citation statements)

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“…24 It has been reported that in nitrogen doped ZnO thin films, the nitrogen atoms could substitute for oxygen as acceptors and then serve as fixed negative charges in the lattice. 25 Similar effect should happen in nitrogen doped a-IGZO thin films as well, leading to more Coulomb scattering events for channel electrons. As a result, under the influence of both positive and negative impacts, l FE of the a-IGZO TFTs could show no apparent change in the studied nitrogen doping range.…”

mentioning

confidence: 81%

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Huang

et al. 2013

Applied Physics Letters

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confidence: 81%

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Huang

et al. 2013

Applied Physics Letters

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“…Two distinct advantages of the N/Al combination are the material abundance and the greater acceptance by the semiconductor manufacturers. Nitrogen doped p-type zinc oxide (NZO) has also been developed by various research groups, by using different techniques, such as, CVD [25,26], sol-gel [27], sputtering [28][29][30] and evaporation [31,32]. In these techniques, the p-type dopant was achieved by adding N as the co-dopant, with or without Al [31,28].…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis of highly oriented p-type aluminum co-doped zinc oxide film with aqua ammonia

2011

Journal of Alloys and Compounds

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“…For sample B, E A was 125 meV, affirming the presence of shallower acceptor levels in codoped films. The acceptor energy level with codoping has been reported to be 119 meV; 70 thus, per the authors' best knowledge, 55 ± 0.37 meV is the lowest acceptor energy level reported yet. We also performed the reliability study of the codoped samples.…”

Section: T I Cmentioning

confidence: 77%

Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species

Sushama¹,

Murkute²,

Ghadi

et al. 2019

ACS Appl. Electron. Mater.

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The modulating nature of doping in oxide-based semiconductors has always been an area of interest as it resulted in numerous technological developments. On working with ZnO, the principal challenge faced in its realistic utilization as an optoelectronic material lies in its default n-type of nature due to the presence of native defects. Thus, achieving p-type behavior has been a tedious job, and considerable efforts have been made over the past couple of decades. The incorporation of monodopants has yielded p-type ZnO of unstable reliability, thus spurring research on codoping technology. In present study, we examined the effects of boron implantation time on the structural and optical properties of phosphorus-doped ZnO thin films, with the objective of realizing a material ideal for optoelectronic applications. Furthermore, we investigated the effects of annealing temperature on the behavior of codoped samples. Field emission gun scanning electron microscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, and conductive atomic force microscopy results evidenced that boron implantation improved the solubility of the acceptor atom (i.e., phosphorus), which in turn improved the films’ acceptor-based optical emission. The various spectral data also indicated the presence and location of boron atoms in the films. Moreover, we realized a shallow acceptor energy level, with the minimum value being 55±0.37 meV from the valence band level. The acceptor-bound exciton peak was observed up to 300 K, indicating the feasibility of room temperature applications of these films. In addition, compared with phosphorus doping, codoping increased the photoluminescence intensity of the acceptor peaks. The codoped samples also exhibited stability in the acceptor behavior with the signature of the acceptor bound peaks observed over the span of 13 months.

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Deposition and properties of B–N codoped p-type ZnO thin films by RF magnetron sputtering

Cited by 13 publications

References 39 publications

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Facile synthesis of highly oriented p-type aluminum co-doped zinc oxide film with aqua ammonia

Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species

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