2003
DOI: 10.1016/s0257-8972(03)00586-3
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Deposition and some properties of carbide/amorphous carbon nanocomposites for tribological application

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Cited by 42 publications
(16 citation statements)
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“…The same type of structure can also be observed for the TiC film, TiC 1.6 , which is an interesting result since the carbon content is relatively high. This relatively high carbon content induces that in this particular TiC film, prepared in the same conditions used for the TiC x O y films, there might be also an amorphous carbon phase in the grain boundaries of the TiC grains, forming a composite of the type nc-TiC/a-C, as claimed by several authors [21][22][23]. An oxygen contamination amount between 1 and 5 at.% is also to be admitted in this sample.…”
Section: Resultssupporting
confidence: 58%
“…The same type of structure can also be observed for the TiC film, TiC 1.6 , which is an interesting result since the carbon content is relatively high. This relatively high carbon content induces that in this particular TiC film, prepared in the same conditions used for the TiC x O y films, there might be also an amorphous carbon phase in the grain boundaries of the TiC grains, forming a composite of the type nc-TiC/a-C, as claimed by several authors [21][22][23]. An oxygen contamination amount between 1 and 5 at.% is also to be admitted in this sample.…”
Section: Resultssupporting
confidence: 58%
“…It can be done in different ways. Preparation of the films with varied C-Si compositions is technologically easily achieved by reactive magnetron sputtering of C or Si target in the presence of corresponding gas like SiH 4 or CH 4 or both together [6][7][8]. However in this case the a-SiC:H films of any composition deposited at low substrate temperature contain much hydrogen.…”
Section: Introductionmentioning
confidence: 99%
“…In order to find the compromised optimum of high hardness and low friction coefficient the a-SiC:H films were deposited at room temperature in two different ways: (i) by sputtering of Si target in the gas mixture of Ar and CH 4 ; (ii) by sputtering of SiC target in the mixture of Ar and CH 4 . In the second case using small addition of CH 4 gas allows easily varying an excess of carbon in the film without significant increase of hydrogen content in comparison with the first case or above mentioned methods [6][7][8] where CH 4 gas plays not as an additional, but the main role for a-SiC:H synthesis. The work focuses on the comparison of mechanical and tribological properties of the films prepared by these ways to find the best combination of these properties.…”
Section: Introductionmentioning
confidence: 99%
“…hybrid plasma-enhanced chemical and vapour deposition processes [16] [11] or by pulsed reactive magnetron sputtering [17]. In this study we report the tribological results of Me-DLC films grown by ECR-CVD on silicon substrates with metal nanoparticles spread over.…”
Section: Introductionmentioning
confidence: 99%