2019
DOI: 10.1007/s13391-019-00152-9
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Deposition Behavior of Boron-Doped Diamond with Varying Amount of Acetone by Hot Filament Chemical Vapor Deposition

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Cited by 7 publications
(2 citation statements)
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“…This would refer to broad peaks found at around 1210 cm −1 in Figure 5b,c. This is manifested by impurities and defects as a result of relaxation of wave vector selection rules due to disorders [30][31][32][33]. Ushizawa and Mortet also note that when boron is doped with diamond, a broad peak at 490 cm −1 is also observed due to interference between continuous electron excitation and the center optic phonon in the discontinuous region [29][30][31][32][33].…”
Section: Resultsmentioning
confidence: 96%
“…This would refer to broad peaks found at around 1210 cm −1 in Figure 5b,c. This is manifested by impurities and defects as a result of relaxation of wave vector selection rules due to disorders [30][31][32][33]. Ushizawa and Mortet also note that when boron is doped with diamond, a broad peak at 490 cm −1 is also observed due to interference between continuous electron excitation and the center optic phonon in the discontinuous region [29][30][31][32][33].…”
Section: Resultsmentioning
confidence: 96%
“…The change in the diamond characterization peak due to boron doping is due to impurities and defects due to relaxation of the selection rule of the wave vector due to disturbance [21][22][23][24]. Additionally, when boron is doped into the diamond film, a broad peak is observed at 490 cm −1 due to interference between continuous electron excitation and the central optical phonon in the discontinuous region, as Ushizawa and Mortet noted [21][22][23][24]. A broad peak at 490 cm −1 was also observed in this study.…”
Section: Resultsmentioning
confidence: 99%