Deposition mechanism of hydrogenated hard-carbon films in a CH4 rf discharge plasma

Mutsukura, Nobuki; Inoue, Satoshi; Machi, Yoshio

doi:10.1063/1.352145

Cited by 163 publications

(72 citation statements)

References 61 publications

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“…They quantified the boundary between the ion energy flux limited regime and the F-atom flux limited regime. Mutsukura et al 11 studied the deposition of hydrogenated hard-carbon films in a CH 4 rf discharge plasma. They found at high pressure that the film deposition rate was predominantly dependent on the ion energy flux.…”

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confidence: 99%

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Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding

Hershkowitz

1996

Applied Physics Letters

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A symmetric rate model for plasma etching and plasma deposition in fluorocarbon plasmas is proposed. When there is no deposition, the symmetric rate model gives a plasma etch rate. When there is no etching, the model gives a plasma deposition rate. Electron cyclotron resonance and reactive ion etcher etch rates of SiO 2 in CF 4 plasma are found to be consistent with the model. © 1996 American Institute of Physics. ͓S0003-6951͑96͒02212-3͔Plasma etching is an important technology in the fabrication of very large scale integrated circuits.1 With the feature size smaller than 0.5 m, the empirical approach for the optimization of plasma etching is getting more and more difficult, and basic understanding of plasma etching is becoming crucial for process control. In the etching of SiO 2 with fluorocarbon plasmas, both etching and deposition occur simultaneously 2 and both processes need to be understood.Many rate models have been proposed for plasma etching ͑see Refs. 3-8 and references therein͒. Among these models, Zawaideh and Kim 7 proposed a model to include both linear effects of chemical and physical etching, and the nonlinear effect of ''enhanced'' chemical and physical etching. Hoffmann and Heinrich 8 simplified the model proposed by Zawaideh and Kim to describe reactive ion etching ͑RIE͒ of polysilicon with SF 6 plasma. Gottscho, Jurgensen, and Vitkavage 10 proposed an ion-neutral synergy model based on the mass transport model proposed by Mayer and Barker. 3,5 In this letter, a symmetric rate model for plasma etching and deposition is developed.In both plasma etching and deposition, energetic ions, etching species, and deposition species have been shown to be important. [9][10][11][12][13][14] showed that plasma etching and deposition rates of plasma perfluoropolymer thin films have a similar dependence on ion energy. Ding et al. 10 found in an electron cyclotron resonance ͑ECR͒ etcher that the etch rates of SiO 2 with CF 4 /O 2 /Ar plasmas only depend on ion energy flux and F-atom density. They quantified the boundary between the ion energy flux limited regime and the F-atom flux limited regime. Mutsukura et al.11 studied the deposition of hydrogenated hard-carbon films in a CH 4 rf discharge plasma. They found at high pressure that the film deposition rate was predominantly dependent on the ion energy flux. They also found at very low pressure that the film deposition rates were almost the same for different rf power at each pressure condition. Similar trends have also been found by the other groups. 12-14Based on the experimental results and the models mentioned earlier, we assume that the ion enhanced chemical etch rate and the ion enhanced chemical deposition rate are proportional to the ion energy flux multiplied by the surface coverage of the etching or deposition species. This assumption means the etch rate and deposition rate are symmetric. If the products of the reaction are volatile, then the process results in net etching. If the products of the reaction are involatile, then the process results in...

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mentioning

confidence: 99%

“…[9][10][11][12][13][14] showed that plasma etching and deposition rates of plasma perfluoropolymer thin films have a similar dependence on ion energy. Ding et al 10 found in an electron cyclotron resonance ͑ECR͒ etcher that the etch rates of SiO 2 with CF 4 /O 2 /Ar plasmas only depend on ion energy flux and F-atom density.…”

mentioning

confidence: 99%

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding

Hershkowitz

1996

Applied Physics Letters

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“…To obtain higher deposition rate, the non-trench Si substrate on which films deposited was set on a stainless steel step of 20 mm in height [22,23]. The substrate temperature was 100 °C.…”

Section: Experimental Methodsmentioning

confidence: 99%

Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method

Dong

Koga

Yamashita

et al. 2015

Trans. Mat. Res. Soc. Japan

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Hydrogen bonding configurations and hydrogen content of a-C:H films deposited by H-assisted plasma CVD were investigated by Fourier transform infrared spectroscopy. Plasma parameters related to deposition rate were derived using optical emission spectroscopy. The a-C:H films contain a large number of sp 3 configurations (93%) and a few sp 2 configurations (7%). Most of the hydrogen is bonded in methyl groups which shows the structure of deposited a-C:H films is polymer-like carbon. The mass density has nearly linear decreases with increasing the hydrogen atom density, indicating that control of hydrogen content is crucial to obtain a-C:H films of high mass density. A slight increase in radical generation rate and significant increases in etching rate by hydrogen atoms lead to decrease the deposition rate when the discharge voltage increases from 170 V to 180 V.

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“…2c). When the CH 3 radicals abundantly exist in plasma, CH3 radicals are adsorbed on the growing surface and promote film growth [15]. The CH3 radicals decrease with increased microwave power, then these result lead to a decrease of deposition rate.…”

Section: Deposition Ratementioning

confidence: 99%

Hydrophobic and Mechanical Characteristics of Hydrogenated Amorphous Carbon Films Synthesized by Linear Ar/CH4 Microwave Plasma

Han

Kim

Cha

et al. 2017

Appl. Sci. Converg. Technol.

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A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has TE 10 -TEM waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, Ar/CH 4 gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform Ar/CH 4 plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at Ar : CH 4 =25:25 sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from 43.9 o to 93.2 o .

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Deposition mechanism of hydrogenated hard-carbon films in a CH4 rf discharge plasma

Cited by 163 publications

References 61 publications

Symmetric rate model for fluorocarbon plasma etching of SiO2

Symmetric rate model for fluorocarbon plasma etching of SiO2

Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method

Hydrophobic and Mechanical Characteristics of Hydrogenated Amorphous Carbon Films Synthesized by Linear Ar/CH4 Microwave Plasma

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