Deposition mechanism of MOCVD copper films in the presence of water vapor

Kim, Jung‐Yeul; Lee, Young-Ki; Park, Hoon-Soo; Park, Jong-Wan; Park, Dong-Koo; Joo, Jinho; Lee, Wonhee; Ko, Young-Kyu; Reucroft, P. J.; Cho, Bum-Rae

doi:10.1016/s0040-6090(98)00597-5

Cited by 27 publications

(11 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides the difference in morphology observed, the thicknesses of the different films were estimated from SEM cross‐sectional views, and the results are shown in Figure . As observed, the films deposited in humid CG were generally thicker, in agreement with previous reports . In dry CG conditions, the deposition rate increased from 1.5 to 3 nm min −1 for a temperature increase from 305 to 350 °C.…”

Section: Resultssupporting

confidence: 92%

“…In MOCVD, it is well known that adding water vapor to the reaction can facilitate precursor decomposition, enhance crystallinity, and reduce carbon contamination . For instance, Kim et al studied the deposition of metallic Cu films with humid gas, observing a large increase in deposition rate. In another work by Pinkas et al, the detailed explanation of the effect of water vapor on the reaction mechanism during the MOCVD deposition of Cu 2 O was given.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD

Liu

Nguyễn

Roussel

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

A study on the effect of carrier gas (CG) humidity on the texture and the resulting electronic properties of Cu2O thin films deposited using aerosol‐assisted chemical vapor deposition (AA‐CVD) at low temperatures (<365 °C) is reported. By increasing the CG humidity, the preferred orientation of the films can be tuned from [110] to [111]. By studying the initial stages of film deposition, a different growth mode is found for dry and humid conditions, which in turn directs the final texture of the films. The analysis of the electric properties of the films by Hall effect shows that carrier concentration remains in the order of 1015 cm−3 when using both dry and humid conditions. Converselly, Cu2O samples deposited with humid CG generally present a higher mobility, up to 17 cm2 V−1 s−1. [111]‐textured Cu2O films with high mobility were used to fabricate a diode by depositing a ZnO layer on top using atmospheric pressure spatial atomic layer deposition (AP‐SALD). The diode shows an excellent rectifying behavior with a high asymmetry close to 104 between −1 and +1 V.

show abstract

Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD

Liu

Nguyễn

Roussel

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…These results imply that any carbon and oxygen on the surface can thus be ascribed to atmospheric contamination when the samples were exposed to air, and not to the ligand hfac of the precursor molecule decomposing on the surface of the substrate to leave impurities in the deposited film. [14,15] The ratio of the peak intensities of Cu(111) and Cu(200) is a key feature in the EM resistance of copper films. [16,17] It was investigated by XRD in this work.…”

Section: Evolution Of Surface Morphologymentioning

confidence: 99%

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Liu

Wang

2006

Chem. Vap. Deposition

View full text Add to dashboard Cite

Copper thin films are produced by CVD using the precursor Cu II bis-hexafluoroacetylacetonate [Cu II (hfac) 2 ], on the self-assembled monolayers of a 3-mercaptopropyltrimethoxysilane (MPTMS) modified substrate. The microstructures of the deposited copper films are characterized by various surface analysis techniques, such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The film resistivity was also measured using the fourprobe method. The results of the measurements indicate that the microstructures of copper thin film are strongly dependent on the substrate temperature during film deposition. The copper thin films deposited have a resistivity as low as 2.1 lX cm in the temperature range 290-350°C. These results indicate that the CVD of copper film on a mercaptan SAM diffusion barrier is a potential technique for copper multilevel metallization.

show abstract

“…Specifically, such calculations may be used to predict the range of CVD parameters where the codeposition of carbon, a problem often encountered in MOCVD, is a minimum. A considerable amount of experimental work has been reported on the effect of MOCVD processing conditions on film purity, resistivity, morphology, selectivity, and growth rate of the Cu films (Griffin and Maverick 1995;Kim et al 1998). But there is no report in the open literature of an effort, based on thermodynamic modelling, to predict the effect of processing conditions on the deposition of copper films produced by thermal MOCVD, though the formation of the oxides of copper has been investigated by this method (Ottosson and Carlsson 1996).…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic investigation of the MOCVD of copper films frombis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

et al. 2002

View full text Add to dashboard Cite

Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material. From among the many chemical species that may possibly result from the CVD process, only those expected on the basis of mass spectrometric analysis and chemical reasoning to be present at equilibrium, under different CVD conditions, are used in the thermodynamic calculations. The study predicts the deposition of pure, carbon-free copper in the inert atmosphere of argon as well as in the reactive hydrogen atmosphere, over a wide range of substrate temperatures and total reactor pressures. Thin films of copper, grown on SiO 2 /Si(100) substrates from this metalorganic precursor by low pressure CVD have been characterized by XRD and AES. The experimentally determined composition of CVD-grown copper films is in reasonable agreement with that predicted by thermodynamic analysis.

show abstract

Deposition mechanism of MOCVD copper films in the presence of water vapor

Cited by 27 publications

References 26 publications

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Thermodynamic investigation of the MOCVD of copper films frombis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

Contact Info

Product

Resources

About

Deposition mechanism of MOCVD copper films in the presence of water vapor

Cited by 27 publications

References 26 publications

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu2O Thin Films Deposited via Aerosol‐Assisted CVD

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu2O Thin Films Deposited via Aerosol‐Assisted CVD

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Thermodynamic investigation of the MOCVD of copper films frombis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

Contact Info

Product

Resources

About

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD

The Role of Humidity in Tuning the Texture and Electrical Properties of Cu₂O Thin Films Deposited via Aerosol‐Assisted CVD