2013
DOI: 10.1002/pssc.201300240
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Deposition of AgGaTe2 on sapphire substrates by closed space sublimation

Abstract: AgGaTe2 layers were grown on a‐plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used primarily to improve the stoichiometry of the film. Grown films were evaluated by XRD measurements. AgGaTe2 layers were grown only at low source temperature (about 780 °C), and to have strong preference for the (103) orientation. By using the pole figure, it is possible… Show more

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Cited by 3 publications
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“…The source temperature was raised to 780 ˚C and 800 ˚C for a-and c-plane sapphire, respectively. These values were optimal condition to grow the AgGaTe 2 layers on those substrates [17].…”
Section: Methodsmentioning
confidence: 99%
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“…The source temperature was raised to 780 ˚C and 800 ˚C for a-and c-plane sapphire, respectively. These values were optimal condition to grow the AgGaTe 2 layers on those substrates [17].…”
Section: Methodsmentioning
confidence: 99%
“…It was cleared that the layer grown on c-plane sapphire has inclusion of Ag 5 Te 3 in AgGaTe 2 . The lattice mismatch based on the arrangement of atoms were studied in past [17], and (103) AgGaTe 2 and a-plane sapphire exhibited about 3.4% of the lattice mismatch. Similaly, the lattice mismatch between (103) AgGaTe 2 and c-plane sapphire was about 7.7%, which was relatively large value.…”
Section: Methodsmentioning
confidence: 99%
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