Deposition of Boron Nitride Films from BB'B"-Trichloroborazine

Abstract

The Chemical Vapor Deposition of boron nitride from BB'BU-Trichloroborazine was investigated in a microbalance equipment with a hot wall reactor. It was possible to monitor the evaporating and depositing masses simultaneously, so that the kinetics of the CVD-process could be measured in detail. The evaporation rate was studied in the temperature range between 285 and 330 K. The activation energy of the evaporation was determined to be 65 & 2 Mlmole. The deposition process was investigated at temperatures between 973 and 1233 K in an argon atmosphere at total pressures between 250 and 2000 Pa. The deposition of boron nitride on silicon could be described by a Langmuir reaction type. A gas phase decomposition of BB'B-Trichloroborazine was observed, so that the concentration at the substrate was dependent on the residence time of the precursor in the hot zone of the reactor. The deposited layers were colorless and amorphous and had the correct 111 stoichiometry between boron and nitrogen (WDX-Analysis). The layers contained less than 1 % of chlorine. SiC-Tyranno-fiber fabrics were coated homogeneously with BN-layers of 200-300 nm thickness. A tensile strength decrease of approximately 15 % was observed for the coated fibers. Oxidation experiments showed that the layers were oxidized at temperatures above 873 K in an Arl02-atmosphere leading to a brittle behavior of the fibers.

Direct Transfer of Kinetic Data from a Microbalance into a Tube Reactor for CVD BN on SiC Fabrics

“…Figures 6b and 6c show that curves with an equal residence time are almost congruent. In a previous study, [36] this led to the conclusion that homogeneous reactions may influence the deposition. The simulation calculations discussed below show, however, that such an assumption is not necessary.…”

Chemical vapor deposition of sp2-boron nitride on Si(111) substrates from triethylboron and ammonia: Effect of surface treatments

“…The literature reveals several studies to deposit sp 2 -BN on silicon substrates by thermal CVD. Depositions performed below 1000 °C on Si, with several boron precursors such as diborane (B2H6) [18][19][20][21][22][23] , decaborane(14) (B10H14) 24 , triethylboron (TEB, B(C2H5)3) 25 and ammonia (NH3) or with single-source precursors such as ammonia-borane (H3NBH3) 10 and Btrichloroborazine (B3Cl3N3H3) 26 resulted in growth of amorphous BN. Turbostratic BN (t-BN) films was reported at 800 °C from borazine (B3N3H6) 27 , at 980 °C from Ntrimethyl borazine (B3H3N3(CH3)3) 28 and at 1200 °C using TEB 25 or BCl3 29 .…”

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

“…The literature reveals several studies to deposit sp 2 -BN on silicon substrates by thermal CVD. Depositions performed below 1000 °C on Si, with several boron precursors such as diborane (B2H6) [18][19][20][21][22][23] , decaborane (14) (B10H14) 24 , triethylboron (TEB, B(C2H5)3) 25 and ammonia (NH3) or with single-source precursors such as ammonia-borane (H3NBH3) 10 and B-trichloroborazine (B3Cl3N3H3) 26 resulted in growth of amorphous BN. Turbostratic BN (t-BN) films was reported at 800 °C from borazine (B3N3H6) 27 , at 980 °C from N-trimethyl borazine (B3H3N3(CH3)3) 28 and at 1200 °C using TEB 25 or BCl3 29 .…”