2004
DOI: 10.1016/j.jcrysgro.2004.07.022
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Deposition of CdSe by EC-ALE

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Cited by 48 publications
(36 citation statements)
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“…Moreover, electrochemistry of metal chalcogenides is a topic of interest in semiconductor technology [17,18].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, electrochemistry of metal chalcogenides is a topic of interest in semiconductor technology [17,18].…”
Section: Introductionmentioning
confidence: 99%
“…InP is a III-V semiconductor with an energy band of 1.28 eV in the bulk material 9 and is a particularly promising as alternative, because of its energy band gap is relatively close to that of CdSe (1.74 eV). 10 Although the photoluminescence quantum yield (PLQY) and emission band width of colloidal InP QDs have been greatly improved in recent years, [11][12][13] the materials have not yet suitable for replacing widely used CdSe-based colloidal QDs. Among II-VI semiconductors, there is no candidate binary material system; however, ternary CuInS 2 -and CuInSe 2 -based materials have been proposed as alternative materials to CdSe.…”
Section: Introductionmentioning
confidence: 99%
“…However, many studies reveal that the deposition of CdSe is in fact a codeposition of Cd and Se, with the presence of selenium excess inside the deposit [20][21][22][23][24]. To overcome this issue, in 1991, Kressin et al [20] have adopted a cyclic voltammetry deposition technique in order to ensure the good "50-50" stoichiometry.…”
Section: Introductionmentioning
confidence: 99%