Deposition of cubic SiC films on silicon using dimethylisopropylsilane

Abstract

We have grown cubic SiC films on the Si(100) and Si(111) substrates in the temperature range of 750–970 °C by low pressure organometallic chemical vapor deposition (LP-OMCVD) using dimethylisopropylsilane (CH3)2CHSiH(CH3)2 as a single molecular precursor. On a carbonized Si(100) substrate, a polycrystalline cubic SiC film was obtained at 960 °C. Cubic-type SiC films were also grown on uncarbonized Si(100) surfaces at 850 °C. At lower temperatures, amorphous SiC films were formed. These growth temperatures are much lower than those reported previously by others. On an uncarbonized Si(111) substrate, however, strongly oriented growth of cubic SiC film in the [111] direction was observed at the growth temperature of 970 °C.

Parameters determining crystallinity in β-SiC thin films prepared by catalytic chemical vapor deposition

“…3. Three distinct peaks appear at 2y ¼ 35:2 ; 60 , 71.5 , which are identified as the (1 1 1), (2 2 0), (3 1 1) b-SiC reflection [12]. As a result, the XRD measurement shows that the structure of the films is b-SiC, which is consistent well with the FTIR measurements.…”

Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

“…While the only diffraction peak from SiC films was detected at 59.6 and could be attributed to (220) b-SiC, no peak from other SiC polytypes could be identified in the XRD spectra. 21 These results suggested that single phase b-SiC films were achieved on graphite substrates with the simple HFCVD technique with graphite functioned as both substrate and carbon source. In addition, the XRD patterns also indicate that SiO 2 /b-SiC/graphite hybrid composite was formed after the annealing treatment.…”

Structural, electronic, and energetic properties ofSiC[111]∕ZrB2[0001]Liu1, Chizmeshya2, Kouvetakis3 2008Phys. Rev. B12020View full textAdd to dashboardCite

“…[3][4][5] One approach, in particular, utilizes acetylene ͑C 2 H 2 ͒ as a reactant to introduce substitutional C atoms into the Si lattice directly at the vicinity of the substrate surface. This produces an interface layer containing C u Si bonds which are identical in length ͑1.90Ϯ 0.03 Å͒ to those of bulk SiC crystals.…”

“…2 Furthermore, the high deposition temperatures ͑970-1300°C͒ that are required for growth of crystalline material on Si promote atomic intermixing at the interface which degrade the structural quality of the films making them unsuitable for device applications. 3,4 A practical route for the integration of cubic SiC with Si substrates is therefore highly desirable from both technological and economic points of view.…”