Deposition of CuInS2 films by electrostatic field assisted ultrasonic spray pyrolysis

Lee, Dong-Yeup; Kim, Junho

doi:10.1016/j.solmat.2010.04.066

Cited by 35 publications

(23 citation statements)

References 14 publications

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“…6, in the range 200-600 cm À1 .The lms show clear peaks for CuInS 2 due to the presence of two distinct CuInS 2 phases: 45,46 the Raman peak for the chalcopyrite phase has been reported to be around 290-295 cm À1 while the CuAu-type ordered phase have a Raman peak around 300-307 cm À2 . The Raman spectra of lms forming the CuInS 2 phase together with secondary phases are shown in Fig.…”

Section: Raman Spectroscopy Characterizationmentioning

confidence: 93%

“…[14][15][16][17][18][19][20][21][22] In particular, the latter provides simple, inexpensive and scalable production of large area lms coupled with close control over the growth process. [14][15][16][17][18][19][20][21][22] In particular, the latter provides simple, inexpensive and scalable production of large area lms coupled with close control over the growth process.…”

Section: Introductionmentioning

confidence: 99%

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Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Ünveroğlu

Zangari

2015

RSC Adv.

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The electrodeposition of Cu-In alloy precursors with suitable stoichiometry and consisting mainly of intermetallic compounds, followed by sulfurization, is a promising method to form good quality CuInS 2 thin films. In this work, Cu-In precursors forming intermetallic compounds were electrodeposited from an acidic solution on Mo substrates at 50 C and sulfurized to form p-type CuInS 2 absorber layers. We studied the crystal structure and compositional characteristics of films before and after sulfurization.Intermetallic compounds, namely Cu 11 In 9 and Cu 9 In 4 , have been observed for precursor films suitable to form CuInS 2 , and p-type CuInS 2 phase with small amounts of CuS was formed, showing the chalcopyrite and CuAu-type ordered phases for Cu/In ratios between 1.09-1.34. The carrier density was increased with increasing Cu/In ratio, but the photoelectrochemical response of the films was not directly related to this ratio. Film morphology has a critical influence on the photocurrent response. The highest photoelectrochemical current was achieved from compact and smooth precursors that were electrodeposited at À1.3 V while the lowest value was obtained with a rough dendritic precursor that was electrodeposited at À1.6 V.

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Section: Raman Spectroscopy Characterizationmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Ünveroğlu

Zangari

2015

RSC Adv.

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“…High efficiency thin film solar cells fabricated based on vacuum based techniques, such as molecular beam epitaxy, co-evaporation, sputtering, ion layer gas reaction are costly [11][12][13]. One of trends in this field is reducing the production cost by introducing vacuum free preparation such as electrodeposition, chemical bath deposition, microwave-assisted synthesis, spray pyrolysis [14][15][16][17] and different wet chemical methods [18][19][20][21][22][23][24][25]. The one pot solution synthesis is one of the best wet chemical methods that have non-vacuum, fast, uncomplicated, highly reproducible, inexpensive equipment, low materials waste, proper stoichiometry and stable colloidal solutions.…”

Section: Introductionmentioning

confidence: 99%

One-pot thermolysis synthesis of CuInS2 nanoparticles with chalcopyrite-wurtzite polytypism structure

Vahidshad

Tahir

Mirkazemi

et al. 2015

J Mater Sci: Mater Electron

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CuInS 2 nanoparticles as the visible (wurtzite, 1.67 eV) or near infrared (chalcopyrite, 1.50 eV) light absorbing material in thin film solar cells, were synthesized using facile, one step heating up method by dissolving of CuCl, InCl 3 and SC(NH 2 ) 2 as precursors in oleylamine (OLA) alone or in combination with oleic acid (OA) and 1-octadecene (ODE) as solvent. The phase, size, morphology, and size distribution were controlled by the coordination ability between solvent molecules and metal precursors, reaction temperature and time. The presence of higher amounts of thiourea or OA to OLA led to the formation of chalcopyrite phase in comparison to wurtzite structure. Also, higher reaction temperatures ([240°C) resulted in favour of more chalcopyrite phase and higher crystallinity but the nanoparticles got agglomerated. As synthesized nanoparticles was characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, high resolution-transmission electronic microscopy, ultravioletvisible-near infrared, photoluminescence. The high resolution TEM confirmed the existence of chalcopyrite structure along with wurtzite structure in the nanocrystal (polytypism). Well controlled chalcopyrite CuInS 2 triangular pyramidal shape with an average size ranging from *10-20 nm size was obtained by using 20 ml OLA or 20 ml OLA along with 4 ml OA and ODE, respectively, with 210°C heating up and 4 h annealing time.

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“…A near‐stoichiometric or In‐rich precursor leads to amounts of secondary phases (CuIn 5 S 8 , Cu‐Au‐ordered domains) resulting in a lower performance due to donor like defects 10, 13, 14. To convert the unwanted Cu‐Au‐ordered CuInS 2 phase (CA), into chalcopyrite ordering (CH), a temperature of about 500 °C is necessary 4, 5, 9.…”

Section: Introductionmentioning

confidence: 99%

Sulfurization of near‐stoichiometric CuIn precursor and the influence of low‐temperature slopes on morphology and structural quality

Dombrowa¹,

Lehmann²,

Pettenkofer³

2012

Physica Status Solidi (b)

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Polycrystalline CuInS 2 (CIS) films are prepared by sulfurization of CuIn metallic precursors with Cu/In=1.2 on Mo substrates. Variation of the rapid thermal processing (RTP) parameters adjusted to the low Cu surplus yielded near stoichiometric CIS films with considerably less CuS x precipitation at the surface. A start temperature and low temperature slopes were introduced to guarantee crystal quality and large grain size. XPS/UPS, XRD and SEM data show the distinct properties of the chalcopyrite phase and its morphological structure in comparison to the standard sulfurization process. A considerable improvement has been achieved by variation of the temperature profiles. The proposed process modules obtain near stoichiometric CIS films for industrial solar cell production.

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Deposition of CuInS2 films by electrostatic field assisted ultrasonic spray pyrolysis

Cited by 35 publications

References 14 publications

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

One-pot thermolysis synthesis of CuInS2 nanoparticles with chalcopyrite-wurtzite polytypism structure

Sulfurization of near‐stoichiometric CuIn precursor and the influence of low‐temperature slopes on morphology and structural quality

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Deposition of CuInS2 films by electrostatic field assisted ultrasonic spray pyrolysis

Cited by 35 publications

References 14 publications

Formation of p-type CuInS2 absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Formation of p-type CuInS2 absorber layers via sulfurization of co-electrodeposited Cu–In precursors

One-pot thermolysis synthesis of CuInS2 nanoparticles with chalcopyrite-wurtzite polytypism structure

Sulfurization of near‐stoichiometric CuIn precursor and the influence of low‐temperature slopes on morphology and structural quality

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Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors

Formation of p-type CuInS₂ absorber layers via sulfurization of co-electrodeposited Cu–In precursors