Deposition of diamond on patterned silicon substrates

Flöter, A.; Schaarschmidt, G.; Mainz, B.; Laufer, Stefan; Deutschmann, S.; Hinneberg, H.-J.

doi:10.1016/0925-9635(94)00253-3

Cited by 16 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The origin of these peaks is still a subject of discussion, but is commonly associated to trans-poly acetylene present on the NCD surface. And finally the sharp peak at 1333 cm −1 caused by the first order Raman response of diamond [18,[26][27][28]. Two laser lines were employed for the Raman measurements, the 514 nm (green) line for comparison with results found in the literature and a 325 nm (UV).…”

Section: Film Characterizationmentioning

confidence: 99%

“…In addition, threedimensional patterned substrates are a useful tool for the study and modelling of CVD growth [15][16][17], which is still not fully understood. Floter et al [18] in 1995, reported a strong dependence of the nucleation density on the orientation of the surface when bias pre-treatment of structured Si substrate was employed. This lead to a very low or absent diamond growth on the side-wall of trenches.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nano crystalline diamond MicroWave Chemical Vapor Deposition growth on three dimension structured silicon substrates at low temperature

Antonin

Schoeppner

Gabureac

et al. 2018

Diamond and Related Materials

View full text Add to dashboard Cite

Nano crystalline diamond (NCD) films grown at a temperature below 400 °C can open new applications on temperature sensitive substrates such as polymers or low-melting point alloys. One requirement for the applicative use of NCD is the ability of depositing on structured substrate showing high aspect ratio. This work presents a study of the 3D conformity NCD deposition at low temperature (350°C) and low pressure (30 Pa). Silicon wafers have been structured using a mask-less DRIE process and seeded with nano-diamond particles. The NCD films were grown on these 3D patterned Si substrate with various trench geometries to provide means of determining the limiting geometries of this technique. By measuring the step coverage with changing trench width, a threshold for conformal NCD growth can be determined. The NCD films at the bottom of the 100 µm deep trenches were continuous down to an aspect ratio of 1:7.

show abstract

Section: Film Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nano crystalline diamond MicroWave Chemical Vapor Deposition growth on three dimension structured silicon substrates at low temperature

Antonin

Schoeppner

Gabureac

et al. 2018

Diamond and Related Materials

View full text Add to dashboard Cite

show abstract

Recent Developments in Heteroepitaxial Nucleation and Growth of Diamond on Silicon

Jiang

Klages

1996

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

After the successful controlled heteroepitaxial nucleation of diamond on 3C‐SiC epitaxial films and on bare silicon wafers, respectively, obtained by research groups in the USA and Germany in 1992, considerable technical progress and scientifical understanding in the area of heteroepitaxy of CVD diamond have been achieved. The decisive role of ion bombardment for the bias‐enhanced epitaxial diamond nucleation is clearly demonstrated. Cross‐sectional high resolution electron microscopic (XREM) investigations show the direct epitaxy of diamond on silicon with a periodic 3‐to‐2 registry of {111} atom planes of the epitaxial diamond—silicon interface. Although the epitaxial growth is of Volmer‐Weber type with slight misorientation, i.e., polycrystalline with epitaxial orientation of individual crystallites, the crystallographical and physical properties of these films represent a significant improvement over the usual randomly oriented films, owing to the reduction of the grain boundary angle distribution width to a few degrees. This paper summarizes results obtained recently in our group in the area of heteroepitaxy of diamond on silicon and discusses problems still to be resolved.

show abstract

Nucleation and Growth of Heteroepitaxial Diamond Films on Silicon

Schreck

Stritzker

1996

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The introduction of the bias pretreatment process for in‐situ nucleation of oriented diamond crystallites on silicon was an important step towards heteroepitaxial deposition of single crystalline diamond films. However, the quality of these films is still limited mainly due to a significant orientational spread of the epitaxial grains around the perfect heteroepitaxial orientation. A further improvement of these films requires an extensive description of the film texture immediately after the nucleation, of its development with increasing film thickness, and an improved insight into the mechanism responsible for the nucleation process. In this report our recent and new results on the heteroepitaxial deposition of diamond on Si(001) and Si(111) and the subsequent textural characterization by X‐ray pole figure measurements are reviewed. The possibilities and limits for improving the film quality by an appropriate textured growth step are discussed. Furthermore, optical measurements inside the plasma during the biasing step and nucleation experiments using patterned substrates indicate that the high field strength above the surface and the resulting acceleration of ions play a dominant role in the formation of diamond nuclei.

show abstract

Deposition of diamond on patterned silicon substrates

Cited by 16 publications

References 8 publications

Nano crystalline diamond MicroWave Chemical Vapor Deposition growth on three dimension structured silicon substrates at low temperature

Nano crystalline diamond MicroWave Chemical Vapor Deposition growth on three dimension structured silicon substrates at low temperature

Recent Developments in Heteroepitaxial Nucleation and Growth of Diamond on Silicon

Nucleation and Growth of Heteroepitaxial Diamond Films on Silicon

Contact Info

Product

Resources

About