Deposition of Fe₈₁B_13.5Si_3.5C₂films by excimer laser ablation and their structural investigation

Abstract

Laser-ablation deposition of films with nominal composition Fe81B13.5Si3.5C2 from targets of Metglass 2605SC ribbons onto room temperature substrates in vacuum is reported. It is found that the density of droplets on the surface of the film is controlled mainly by variation of the laser pulse energy. Scanning electron microscopy and energy-dispersive x-ray analyses indicate that the films are ablated as stoichiometric phases. X-ray diffraction and conversion electron Mossbauer spectra show a line broadening of the amorphous pattern compatible with a decrease in average grain size compared with the ribbon target. Analysis of the hyperfine field distribution at Fe sites indicates a 23% content in nano-sized particles in the ablated films, with the particles having an estimated average grain size of about 15 nm.

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction

“…As an important optoelectronic device, infrared image sensor has been widely applied in missile warning system, fire monitoring, camera, and fax machines. [45,46] To explore the possibility of the PdSe 2 film/pyramid Si heterojunction device for photosensing application, two NIR images of "house" and "tree" were obtained by shining a mask with a 980 or 1300 nm light source. The schematic diagram of the setup is depicted in Figure 6a, in which the individual device that is controlled by an automatic displacement platform was used to sense the image in Figure 6b.…”

Inorganic UV–Visible–SWIR Broadband Photodetector Based on Monodisperse PbS Nanocrystals

“…[ 11 ] With this strategy, the initial growth is well controlled and the seed NCs grown during the Visible and infrared (IR) photodetectors are widely used in optical communications, imaging, security, ranging, and consumer electronics. [1][2][3][4] While silicon (Si) photodetectors are excellent in the visible and near IR regions, it has a low sensitivity beyond 1000 nm. [ 5,6 ] For sensing in the short-wave IR (SWIR) wavelength region (up to 1700 nm), InGaAs photodetectors are typically used.…”

2D Metal Chalcogenides for IR Photodetection

“…Infrared (IR) photodetection has been widely used in modern multifunctional technologies such as thermal imaging, biomedical imaging, night vision, information communication, military, etc. [1][2][3] This involves the detection wavelengths ranging from 750 nm to 1 mm, being divided into three regions: near-IR (NIR, 750 nm to 3 µm), mid-IR (MIR, 3-15 µm), and far-IR (FIR, 15 µm to 1 mm). [4] Nowadays, the detection of different technologically crucial wavelength regions is implemented by separate photosensitive semiconductors with appropriate bandgaps.…”