Deposition of Fluorinated a ‐ SiC :  H  Films at Room Temperature

Abstract

A mixture of tetramethylsilane/CFJH2 is used for depositing fluorinated amorphous silicon carbide thin films at room temperature under heavy ion bombardment in a 13.56 MHz RF powered, asymmetric plasma reactor. An optical emission spectrometer and a quadrupole mass spectrometer are used to measure the concentrations of chemical species in the plasma phase while the bonding structure of the deposited films is analyzed by Fourier transform infrared spectroscopy (FTIR).The results indicate that the density and the optical properties of the films obtained at room temperature are as good as those deposited at much higher temperatures. The fluorination results in elimination of the bound hydrogen in the deposited film, decreases in the refractive index and extinction coefficient, an increase in the optical bandgap, and a decrease in the intrinsic stress of the film. Based on the gas-phase concentration measurements and the film bonding structures observed, growth mechanisms of the deposition are suggested.

Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge

“…Our results, together with those on the incorporation of fluorine in a-SiC:H and a-C:H films, 11,12,[15][16][17][18]23 indicate that the chemical state in which F is incorporated controls the optical and surface properties of the films. Fluorine is incorporated mostly in the form of Si-F bonds and leads to a decrease in the Si content with concomitant decrease in the number of Si-C bonds.…”

“…Another important mechanism of mass deposition by our synthesis method is the direct incorporation of energetic species into the film, i.e., implantation of the ions accelerated in the plasma sheath. 7,11 Selected infrared spectra are shown in Fig. It is apparent that addition of C 2 F 6 increases the total amount of ionization and dissociation that occurs in the precursor atmosphere thereby increasing the plasma density.…”

“…[2][3][4][5] In addition, a-Si x C 1Ϫx :H is an important optoelectronic material since the optical gap can be adjusted by changing the carbon content. Some previous works reported that incorporation of fluorine in a-SiC:H films reduces the internal stress 11 and leads to higher thermal stability. [7][8][9][10] However, the potential of fluorinated a-SiC:H films for protective coating applications has not been extensively examined.…”

High Ion Conducting Dobule Network Crosslinked Gel Polymer Electrolytes for High‐Performance Supercapacitors

“…3:1, 4:1, and 5:1), and their ionic conductivities were evaluated using electrochemical impedance spectroscopy (EIS) in the temperature range of −5–115 °C and the 15 °C increments. Figure shows the temperature dependence of ionic conductivity σ DC for DNEs, and their σ DC ( T )s were analyzed by the Vogel‐Tamman‐Fulcher (VTF) equation (equation (), solid lines): [ 38,39 ] $$$$\begin{eqnarray}{\sigma _{{\rm{DC}}}}\left( T \right){\rm{\; = \;}}\frac{A}{{{T^{\frac{1}{2}}}}}\;{\rm{exp}}\left[ { - \frac{{E_A^{{\rm{VTF}}}}}{{R\left( {T - {T_0}} \right)}}} \right]\end{eqnarray}$$$$…”

“…3:1, 4:1, and 5:1), and their ionic conductivities were evaluated using electrochemical impedance spectroscopy (EIS) in the temperature range of −5-115 °C and the 15 °C increments. Figure 5 shows the temperature dependence of ionic conductivity 𝜎 DC for DNEs, and their 𝜎 DC (T)s were analyzed by the Vogel-Tamman-Fulcher (VTF) equation (equation (4), solid lines): [38,39] 𝜎 DC (T)…”