Deposition of Germanium Films by Sputtering

Haq, K. E.

doi:10.1149/1.2423582

Cited by 20 publications

(9 citation statements)

References 2 publications

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“…In recent years, owing to a number of practical applications in the field of micro-electronics and opto-electronics a great deal of interest has been shown in the study of the dielectric and conduction behaviour of various semiconducting materials [ 1 to 41. Earlier workers have prepared semiconducting germanium thin films using different techniques such as sputtering [5], electron bombardment [6], vacuum evaporation [7], etc., and studied their properties. Although intensive work has been carried out on structure, structural defects, and resistivity studies on germanium thin films [7 to 111 not much work has been done on their dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

Structure, dielectric, and AC conduction properties of amorphous germanium thin films

Balasundaram

Mangalaraj

Narayandass

et al. 1992

Phys. Stat. Sol. (a)

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Al‐G e‐A l (MSM) capacitors are formed by vaccum evaporation under a vacuum of 2.66 × 10−3 Pa. The thicknesses of the films (Ge) are measured by multiple beam interferometer technique (MBI). From X‐r ay diffraction studies, the structure of the germanium film (d = 47 nm) is found to be amorphous in nature. Aging, annealing, dielectric, and ac conduction studies are made for these films. The dielectric constant for a film of thickness 47.5 nm at 1 kHz and at room temperature is calculated to 16.5 and its value was found to increase gradually with the thickness of the films. AC conduction studies reveale that the conduction machanism is due to hopping of electrons. The activation energies are calculated from the relaxation process and using the plot of log conductance versus the inverse absolute temperature. Cole‐C ole diagrams are drawn and from these diagrams the spreading factor, β, and relaxation time, τa, are determined.

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Section: Introductionmentioning

confidence: 99%

Structure, dielectric, and AC conduction properties of amorphous germanium thin films

Balasundaram

Mangalaraj

Narayandass

et al. 1992

Phys. Stat. Sol. (a)

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“…Si layers showing preferred orientation have been grown at 200°C by triode sputtering (Clark and Alibozek 1968) but there is no published account of good quality epitaxial Si layers grown by any sputtering method. Only limited information is available on the growth of epitaxial layers of Ge (Krikorian 1964, Haq 1965, Similar from the used and Wolsky et al 1965, Krikorian and Sneed 1966, Layton and Cross 1967, and Luby 1969 and GaAs (Molnar et al 1964). With diode-sputtered Ge layers, the homo-epitaxial temperature was greater than the corresponding vacuum evaporation value (Krikorian and Sneed 1966) unless deliberate ion bombardment of the growing surface was employed (Haq 1965, Luby 1969.…”

Section: Introductionmentioning

confidence: 99%

“…Only limited information is available on the growth of epitaxial layers of Ge (Krikorian 1964, Haq 1965, Similar from the used and Wolsky et al 1965, Krikorian and Sneed 1966, Layton and Cross 1967, and Luby 1969 and GaAs (Molnar et al 1964). With diode-sputtered Ge layers, the homo-epitaxial temperature was greater than the corresponding vacuum evaporation value (Krikorian and Sneed 1966) unless deliberate ion bombardment of the growing surface was employed (Haq 1965, Luby 1969. The increase in the equivalent epitaxial temperature for diode-sputtered layers was interpreted by Krikorian and Sneed (1966) as being due to the effect of gas atom collisions at the substrate surface lowering the effective temperature of surface atoms.…”

Section: Introductionmentioning

confidence: 99%

“…With triode sputtering, reduced epitaxial temperatures for Ge were observed (Wolsky et al 1965, Layton andCross 1967) because the nucleation process was now influenced by the "extra" energy of sputtered atoms and also by gas discharge conditions (Bovey 1969). Only in a few cases was an assessment of the quality of sputtered Ge and GaAs layers made (Krikorian 1964, Haq 1965, Wolsky et al 1965, and Molnar et al 1964. The twinning and high fault density present in these layers could be due to inherent limitations in the diode and triode sputtering techniques used.…”

Section: Introductionmentioning

confidence: 99%

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Growth of epitaxial silicon layers by ion beam sputtering

Unvala

Pearmain

1970

J Mater Sci

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An ion beam sputtering technique has been developed which made possible the production of homo-epitaxial Si layers by sputtering for the first time. The A+ ion beam source was considerably modified from the initial design of Hill and Nelson (1965) to give the purity needed for the production of semiconductor layers without mass analysis of the ion beam. Typically, a 12keV 4mA beam of A+ ions struck a Si target at 60° incidence and ejected sputtered atoms were deposited at a rate of 200 A/min on a heated Si(111) substrate placed just above the target. Epitaxial layers were grown at temperatures above about 700°C and the structural quality of these layers was evaluated by transmission electron microscopy. Layers grown at temperatures in excess of 900°C contained only dislocation defects normally to a density of about 8x109 cm-2, whereas epitaxial layers grown at lower temperatures also exhibited stacking faults and microtwinning. The existence of defects in epitaxial layers has been correlated with the severity of bombardment of the substrate during deposition by secondary ions from the target. In all cases, the bombardment conditions were severe enough to continually transform a thin 100 A thick surface region of the newly-deposited sputtered layer to a disordered state. The subsequent reordering characteristics of this disordered surface controlled not only the prominence of individual defects in any epitaxial layer but also whether a layer was single crystal. Electrical properties of epitaxial layers were also strongly dependent on bombardment conditions allowing only high resistivity N-type layers to be grown independent of target conductivity-type and resistivity.The ion beam sputtering properties of Si and GaAs have also been investigated. The similarity in results for single crystal targets to those for polycrystalline targets was again attributed to ion-bombardment-induced surface disorder. Stoichiometric layers of GaAs could only be obtained from polycrystaline targets.

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“…43 SPUTTER GAS Although germanium has been deposited by vacuum evaporation and sputtering techniques, the films usually show p-type conductivity, even though the source materials were heavily doped with n-type impurities. Some authors attributed this result to impurities, while others considered it to be due to imperfection in the crystalline structure of the films and surface states [59], bulk properties of Ge [60], or in the case of silicon, contamination of the structural defects [61].…”

Section: Choice Of Sputter Depositionmentioning

confidence: 99%

Germanium-based metal-semiconductor-metal photodetectors for 1.550μm optical communication wavelength

Agha-Mirbaha¹

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Deposition of Germanium Films by Sputtering

Cited by 20 publications

References 2 publications

Structure, dielectric, and AC conduction properties of amorphous germanium thin films

Structure, dielectric, and AC conduction properties of amorphous germanium thin films

Growth of epitaxial silicon layers by ion beam sputtering

Germanium-based metal-semiconductor-metal photodetectors for 1.550μm optical communication wavelength

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