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To understand ``fatigue'' or ``burn-in'' in the target of a PbO Vidicon, experiments have been made with sandwich cells of evaporated PbO. It has been demonstrated by using chopped radiation that as the PbO layer fatigues, there is an increase in short term dark conductivity. Further, it has been shown that the phenomenon is associated with loss of oxygen from the surface of the crystals during irradiation with photons. A surface chemistry model similar to one proposed by Morrison and Melnick in connection with ZnO is used to explain the observed results.

Both n and p‐type germanium films were deposited epitaxially by using asymmetric a‐c sputtering. The quality of the films was found to be strongly dependent on the substrate temperature and the voltages during both the cleaning and the sputtering cycles. It was demonstrated that when the sputtering parameters were properly adjusted, the films deposited from n‐type source material showed n‐type conductivity, even when they were polycrystalline, indicating that the p‐type conductivity observed previously in sputtered films was primarily due to impurities. Further, epitaxial films of the same type and conductivity and of approximately the same carrier concentration as the source material were deposited with substrate temperatures as low as 350°C.

The optical absorption characteristics of GeC14, both with and without free germanium present in the system, have been studied for the wavelength region between 2300A and 2~,. Pure GeC14 was found to have a dissociation continuum with the long wavelength edge beginning at 2700A at a temperature of 150~When free germanium was added to the system, GeC14 was found to react with it to give rise to one or more species, depending on whether or not the molar quantity of free germanium was greater than that of GeC14. It has also been observed that GeC12 has a strong absorption band with a peak at 3150A.