High pressure melting curve of tin measured using an internal resistive heating technique to 45GPaThermal conductivity measurements of 6H SiC crystals were done in the 300-500 K range by means of radiation thermometry. Both p -and n -type crystals with carrier concentrations in the 8 X 10 15 to 10 20 cm -3 range were used. For the purest samples it was found that the thermal conductivity normal to the c axis is proportional to T-149, the room-temperature value being 3.87 WI cm deg. It was also found that the thermal conductivity parallel to the c axis is about 30% lower than that normal to the c axis. Electrical data in the 100-1000 K range are also presented.

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The saturated electron drift velocity has been measured in epitaxial 6H silicon carbide layers. The saturation occurs at an electric field of approximately 2×105 V/cm. The saturated drift velocity is 2×107 cm/s at room temperature, i.e., a factor of 2 higher than in silicon.

The electrical breakdown of one-sided abrupt p-n junctions in 6H silicon carbide has been investigated. The diodes are produced by vapor growth and mesa etching. Breakdown fields in the range (2–3.7) ×106 V/cm have been observed for p layers with 1017<NA<2×1018 cm−3. These figures tend to support the results of van Opdorp and Vrakking.

Stress waves were generated in sections of human vascular tissue by transmitting laser pulses from a XeCl laser source through a glass fiber. Needle-type polyvinylidenefluoride hydrophones were used to detect the acoustic response of the tissue samples during ablation. The experimental arrangement allowed the discrimination in vitro between calcified hard tissue and normal arterial wall immersed in normal saline solution. Atheromatous vessels exhibited a shorter rise time and a higher peak stress than normal tissue.