Thermal conductivity and electrical properties of 6<i>H</i> silicon carbide

Burgemeister, E.A.; Muench, W. von; Pettenpaul, E.

doi:10.1063/1.326720

Cited by 153 publications

(68 citation statements)

References 9 publications

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“…54 A similar behavior of the temperature dependence slope above room temperature has been observed for the thermal conductivity of n-and p-type 6H SiC. 55 Figure 7 also shows the temperature dependence slope extracted from the calculated thermal conductivity. The deviation from the values determined from the experimental temperature dependence at high Si concentration can be attributed to the overestimation of the FE-scattering and the neglecting of the electronic thermal conductivity as discussed above.…”

Section: Resultssupporting

confidence: 54%

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

et al. 2017

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The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE) with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3) was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

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Section: Resultssupporting

confidence: 54%

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

et al. 2017

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“…Figure 4 shows the calculated parameters of the thermal conductivity. Reduction in thermal conductivity is related to the matrix material which was a SiC and is consistent with other research centers [11,12]. Differences in the values between samples are related to the change in the quantity of SiC in the sample (85, 80 and 75 %).…”

Section: Resultssupporting

confidence: 72%

Microstructure and thermal characteristics of SiC–Al2O3–Ni composite for high-temperature application

Pędrak

Drajewicz

Dychtoń

et al. 2016

J Therm Anal Calorim

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The development of the aviation industry is related to the production of new materials that can operate at high temperatures and corrosive atmospheres. The paper presents new material for application in high temperature obtained by pressing and sintering a composite made from SiC-Al 2 O 3 -Ni. Analysis of the microstructure showed high porosity, which is caused by used manufacturing technique. Studies of thermal expansion do not show any phase transition and keeps linearity in thermal expansion in wide range (from 550 to 1450 K). X-ray diffraction showed the presence of all components of phase with those used, the phase associated with the components and silicon oxide, which was formed during the sintering of the samples.

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“…Figure 2 shows the transmission electron microscope (TEM) image of the CNT/SiC composite material. The features of CNT/SiC composite obtained by this method are, 1. high-density, well-aligned, and catalyst-free, 2. flexible CNT tips (Miyake et al, 2007) , 3. high thermal conductivity of SiC (Burgemeister et al, 1979) and the CNTs, and 4. high adhesive strength of CNTs with the SiC substrate. In other words, a CNT/SiC composite material meets the requirements for TIMs.…”

Section: Features Of Cnt/sic Composite Materialsmentioning

confidence: 99%

“…The low resistance of pristine SiC indicates the high potential of SiC crystal itself as a TIM. It should be mentioned here that the intrinsic thermal conductivity of SiC crystal is about 360 W/mK, which is comparable to that of copper (403 W/mK) or silver (428 W/mK) (Burgemeister et al, 1979). In order to make a comparison practical TIMs, then, we measured the thermal resistance of the pristine SiC single crystal coated with silicon grease to a thickness of 50 μm.…”

Section: Cnt Sicmentioning

confidence: 99%

A Close-Packed-Carbon-Nanotube Film on SiC for Thermal Interface Material Applications

Norimatsu¹,

Kawai²,

Kusunoki³

2011

Electronic Properties of Carbon Nanotubes

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Thermal conductivity and electrical properties of 6H silicon carbide

Cited by 153 publications

References 9 publications

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Microstructure and thermal characteristics of SiC–Al2O3–Ni composite for high-temperature application

A Close-Packed-Carbon-Nanotube Film on SiC for Thermal Interface Material Applications

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