The thermal conductivity of undoped, Sn-doped, and Fe-doped β-Ga2O3 bulk crystals was measured by the 3ω technique in the temperature range of 295–410 K. A unique approach for extracting the thermal conductivity along the lateral and transverse heat flow directions was used in order to determine the thermal conductivity along different crystallographic directions. The data analysis at room temperature confirmed the expected anisotropy of the thermal conductivity of β-Ga2O3, revealing the highest value of ∼29 W/m K in the [010] direction. The thermal conductivity of the Sn-doped and Fe-doped β-Ga2O3 samples was found to be lower than that of the undoped samples due to the enhanced phonon-impurity scattering contribution, which reduces the thermal conductivity. This tendency was maintained for the thermal conductivity at elevated temperatures. The thermal conductivity in all samples decreased with increasing temperature, but the slope of the temperature dependence was found to depend on both the doping and the crystallographic orientation.

The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE) with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3) was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

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Quench protection is a remaining challenge impeding the implementation of high temperature superconductor (HTS)-based magnet applications. This is due primarily to the slow normal zone propagation velocity (NZPV) observed in Bi 2 Sr 2 CaCu 2 O X (Bi2212) and (RE)Ba 2 Cu 3 O 7 − x (REBCO) systems. Recent computational and experimental findings reveal significant improvements in turn-to-turn NZPV, resulting in a magnet that is more stable and easier to protect through three-dimensional normal zone growth (Phillips M 2009; Ishmael S et al 2013 IEEE Trans. Appl. Supercond. 23 7201311). These improvements are achieved by replacing conventional insulation materials, such as Kapton and mullite braid, with a thin, thermally conducting, electrically-insulating ceramic oxide coating. This paper reports on the temperaturedependent thermal properties, electrical breakdown limits and microstructural characteristics of a titanium oxide (TiO 2 ) insulation and a doped-TiO 2 -based proprietary insulation (doped-TiO 2 ) shown previously to enhance quench behavior (Ishmael S et al 2013 IEEE Trans. Appl. Supercond. 23 7201311). Breakdown voltages at 77 K ranging from ∼1.5 kV to over 5 kV are reported. At 4.2 K, the TiO 2 increases the thermal conductivity of polyimide by about a factor of 10. With the addition of a dopant, thermal conductivity is increased by an additional 13%, and a high temperature heat treatment increases it by nearly an additional 100%. Similar increases are observed at 77 K and room temperature. These results are understood in the context of the various microstructures observed.