Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures

Caballero, J. A.; Park, Y. D.; Cabbibo, A.; Childress, J. R.; Pétroff, F.; Morel, R.

doi:10.1063/1.363977

Cited by 44 publications

(12 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, we have demonstrated that outstanding structural quality, and the expected magnetic and electrical properties, can be obtained in sputter-deposited thin films on glass substrates by reducing argon gas pressure and deposition rates to minimum value, while allowing the substrate temperature to be kept around 300°C and eliminating the need for postdeposition annealing. 7 In this report, we extend these results to films deposited of Si substrates, which are compatible with standard electronic processing and suitable for device integration.…”

Section: Introductionsupporting

confidence: 52%

“…A detailed description of our film preparation conditions has already been given in the initial report, 7 and the deposition onto Si substrates is similar. Briefly, we deposit NiMnSb films by radio frequency (rf) magnetron sputtering of a single composite, 99.9% pure NiMnSb target onto Si wafer substrates.…”

Section: Methodsmentioning

confidence: 99%

“…3,8 We found in our initial study on glass substrates that the structural properties of the films were highly sensitive to the sputtering parameters. 7 In particular, a decrease of the rf sputtering power applied to the target dramatically increased the crystallinity. For example, a featureless x-ray spectrum was observed at 100 W, while lowering the power to 15 W resulted in a sharp x-ray spectrum corresponding to the expected C1 b structure.…”

Section: Structural Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates

Caballero

Park

Cabbibo

et al. 1997

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

We have deposited ferromagnetic NiMnSb thin films by sputtering from a single composite target onto Si wafer substrates. Similarly to earlier results using glass substrates, we find that a combination of low radio frequency power, low argon pressure, and moderate substrate temperature is successful at directly obtaining stochiometric, single-phase polycrystalline films with the bulk C1 b crystal structure. The use of Si substrates, however, is compatible with standard electronic processing and integration into electronic device structures. The similarity of the films to bulk NiMnSb suggests that the predicted half-metallic (100% spin-polarized) electronic properties of NiMnSb can be reproduced in a magnetically active thin-film device structure.

show abstract

Section: Introductionsupporting

confidence: 52%

Section: Methodsmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates

Caballero

Park

Cabbibo

et al. 1997

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

“…High-quality NiMnSb and NiYBi thin films have been deposited by radiofrequency (RF) magnetron sputtering or molecular-beam epitaxy. [17][18][19] MNiSn-based HH thin films have also been synthesized by magnetron sputtering or electron beam deposition, exhibiting a largest Seebeck coefficient and power factor on the order of tens of lV K À1 and on the order of 0.1 mW K À2 m À1 , respectively. [20][21][22] The reliable ZT values of crystalline HH materials have been limited to around 1.0 so far, mainly due to the high thermal conductivity of HH compounds.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering

Zhou

Tan

Zhu

et al. 2015

Journal of Elec Materi

View full text Add to dashboard Cite

n-Type Zr-Ni-Sn thermoelectric thin films with thickness of 60 nm to 400 nm were deposited by radiofrequency magnetron sputtering. The microstructure of the Zr-Ni-Sn thin films was examined by x-ray diffractometry and highresolution transmission electron microscopy, revealing an amorphous microstructure. The thermal conductivity of the amorphous films was measured by the ultrafast laser pump-probe thermoreflectance technique, revealing values of 1.4 W m À1 K À1 to 2.2 W m À1 K À1 , smaller than that of bulk material because of the amorphous microstructure of the films. The effects of the sputtering power on the composition, Seebeck coefficient, and electrical conductivity of the films were investigated. The largest Seebeck coefficient and power factor were achieved at 393 K, being À112.0 lV K À1 and 2.66 mW K À2 m À1 , respectively. The low thermal conductivity and high power factor indicate that amorphous Zr-Ni-Sn thin films could be a promising material for use in thermoelectric microdevices.

show abstract

“…This means it potentially can be used as ''spin filter'' layers in multilayer systems to produce stronger conventional or tunneling giant magneto-resistance effects. 10,[17][18][19][20] Large magnetoresistance was found in evaporated NiMnSb/Al 2 O 3 /NiFe multilayer structures due to a spin-polarized tunneling effect. 19 MO Kerr responses over the range from 0.8 to 5.0 eV for sputter-deposited NiMnSb thin films have been published.…”

Section: Introductionmentioning

confidence: 99%

Dielectric tensor for magneto-optic NiMnSb

et al. 1999

View full text Add to dashboard Cite

The diagonal component xx and off-diagonal component xy of the complex dielectric tensor for the ferromagnetic compound NiMnSb are determined using ex situ spectroscopic ellipsometry and magneto-optic analysis over the spectral range from 0.7 to 6.2 eV. The effects of the overcoat on the raw data are removed by the analysis. First, the complex xx of thin-film NiMnSb were determined by ex situ spectroscopic ellipsometry; then xy was determined by analyzing Kerr rotation and ellipticity data using the determined xy data. Lorentz oscillators were used to model peaks seen in the xx spectra. The diagonal dielectric component xx is dominated by free-carrier effects below 1.15 eV, and dominated by interband transitions above 2.0 eV. The center energies of the Lorentz oscillators are consistent with the calculated band structure and minority-spin optical conductivity of NiMnSb. Joint density of states and optical conductivity calculated from xx (2) data with free-carrier effects removed shows onset energies at ϳ0.6 and ϳ0.2 eV, respectively. From a study of the xx and xy spectra, the Kerr rotation peak at lower energy is determined to be due to combined contributions from: ͑1͒ a crossover between the free-carrier effect and interband transitions, and ͑2͒ transitions involving spin-orbit coupling. The high-Kerr rotation peaks at higher energies result exclusively from transitions involving spin-orbit coupling. ͓S0163-1829͑99͒13615-4͔

show abstract

Deposition of high-quality NiMnSb magnetic thin films at moderate temperatures

Cited by 44 publications

References 13 publications

Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates

Sputter-deposition of NiMnSb magnetic thin films from a composite target onto Si substrates

Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering

Dielectric tensor for magneto-optic NiMnSb

Contact Info

Product

Resources

About