Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900 °C. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity.
Continuous and uniform graphene films were directly grown on SiO 2 substrates using a chemical vapor deposition system with two-temperature zones assembled. The carbon species from the high temperature zone nucleate in the low temperature zone, initiating the growing process of graphene. The films are
The urgent need for large-scale, low-cost energy storage has driven a new wave of research focusing on innovative batteries. Due to the high capacity and the low-cost of elemental Al, aluminum-ion batteries (AIBs) are expected as promising candidates for future energy storage. However, further development of AIBs is restricted by the performance of existing carbonbased cathodes and metal chalcogenide cathode materials. In this work, we deposited polythiophene (Pth) on a graphene oxide (Pth@GO) composite and used it as an AIB cathode material. This Pth@GO composite possesses high exposure of Pth active sites, high conductivity, and high structure stability while providing a very high discharge capacity (up to 130 mAh g −1 ) and outstanding cyclic stability (maintaining above 100 mAh g −1 after 4000 cycles). First principles calculations and experimental results show that the charge is stored on Pth@GO through an electrostatic attraction between AlCl 4 − and β-hydrogen (C β −H) sites in polythiophene.
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