Deposition of nanocrystalline cubic silicon carbide films using the hot-filament chemical-vapor-deposition method

Abstract

Nanocrystalline cubic silicon carbide (3C–SiC) films embedded in an amorphous SiC matrix were fabricated by the hot-filament chemical-vapor-deposition technique using methane and silane as reactance gases. High-resolution transmission electron micrographs clearly showed that these films contain naoncrystallites, with an average dimension of about 7 nm, embedded within an amorphous matrix. X-ray photoelectron spectroscopy, x-ray diffraction, infrared absorption, and Raman scattering studies revealed the nanocrystallites as having the structure of that of 3C–SiC. In contrast to 3C–SiC, where no photoluminescence could be observed at room temperature, strong visible emission with a peak energy of 2.2 eV could be seen from the nanocrystalline films at room temperature. The presence of nanocrystalline cubic SiC in these films is believed to result in a change in their energy-band structure, compared to that of 3C–SiC, which promotes radiative recombination of electron–hole pairs.

White Luminescence from Sol–Gel‐Derived SiOC Thin Films

“…From 1000°C and up to 1200°C, the green‐yellow band did not move spectrally in T H D H 2 (stoichiometric SiOC) films and stayed at 560 nm. This band could be assigned to the formation of SiC phase which is known to emit in the green range (550–570 nm) 9,15 . Moreover, it is known that for pyrolysis temperature above 1000°C silicon oxycarbide glasses undergo a phase separation process with the formation of β‐SiC phase 5 .…”

Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

“…A series of PL spectra acquired at room temperature under continuous UV irradiation for different periods of time from an anodized SiC thin film prepared by using a current density of 10 mA/cm 2 for 5 min [117]. [118]. The HRTEM images show that these films contain embedded nanocrystallites with an average dimension of about 7 nm (Fig.…”

“…High resolution TEM image of nanocrystalline 3C-SiC embedded in an amorphous SiC matrix showing the presence of nanocrystallites in the sample[118].…”

Effect of radio frequency bias on the optical and structural properties of nanocrystalline SiC films deposited by helicon wave plasma enhanced chemical vapor deposition

“…[3,4] In addition, due to the capability of the nanocrystalline silicon carbide to emit light in the full visible wavelength range, it is also an especially promising material for a large area color display devices. Many techniques have been applied the preparation of SiC films [5][6][7][8] . However, it is well known that deposition of β -SiC films by conventional PECVD suffers from higher substrate temperature, which results in problems of impurity incorporation and diffusion.…”