Deposition of nanostructured metal coatings on the modified silicon surfaces in the magnetoplasma compressor

Erosion of materials under the effect of compression plasma flows

“…Earlier studies on depositing products of the explo sion of a conductor or dispersed metal powder using compression plasma flows generated by a quasi sta tionary plasma accelerator showed that atoms of the substrate material are present in the formed nano structured coating [10,11]. Their concentration under the experimental conditions reached 50 at % [11].…”

Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

“…One can see that the energy transfer from the capacitor bank to the discharge is terminated at the end of the first current half-period (∼70µs). There are three main direction and application in surface modification of material by CPFs which can be marked out as following: (i) Direct treatment of materials [23][24][25][26], (ii) Mixing of a "coating-substrate" system [19,[27][28][29][30], (iii) Thin film deposition and surface layer alloying by an additional component (e.g., powder) injected into the plasma flow [31][32][33].Plasma beams impinging on solid targets transfer their kinetic energy into both electronic and lattice excitations. Beam energy is converted quickly into atomic motion.…”

Dynamics of the interaction between plasma flows generated by a miniature magnetoplasma compressor and a target

“…The maximum electron density and temperature in the compression flow plasma (1.2⋅10 16 cm -3 and ~3 eV) are achieved at a distance of ~1 cm from the end of the discharge device when the mini-MPC is operated with a working gas (hydrogen) pressure of p 0 = 3 Torr and a bank voltage of U 0 = 3 kV. When the compression plasma flow generated by the mini-MPC interacts with a target, a shock compressed plasma layer develops near the target surface with an electron density and temperature approaching 6.7⋅10 16 cm -3 and 4.5 eV (for p 0 = 3 Torr and U 0 = 3 kV), which is sufficient for modifying the surface properties of silicon wafers [12]. When the pressure in the MPC vessel is raised to p 0 = 10 Torr, the temperature and density of the electrons in the shock compressed plasma layer decrease by 10-20%.…”

“…The exposing metal and alloy surfaces to compression plasma flows leads to substantial structural and phase changes in the modified layer, which provide a considerable improvement in the performance characteristics of processed samples [9][10][11]. Exposing semiconductor materials to compression plasma flows opens up new possibilities for the fabrication of nanostructures and coatings, including on silicon wafers [12,13].…”