Deposition of the tin sulfide thin films using ALD and a vacuum annealing process for tuning the phase transition

Choi, Yeonsik; Park, Hyun-Woo; Lee, Namgue; Kim, Byunguk; Lee, Junghoon; Lee, Gucheol; Jeon, Hyeongtag

doi:10.1016/j.jallcom.2021.162806

Cited by 20 publications

(7 citation statements)

References 33 publications

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“…In addition, the A 1g mode peak of SnS 2 gradually decreased as the doping concentration of zinc increased from 49:1 to 9:1 because the binding of tin and sulfur was destroyed by incorporation of zinc atoms or the zinc substitution of tin sites changed atomic arrangements and film crystallinity. In addition, a Raman peak at 303 cm −1 in a thin film with a Sn/Zn ratio of 11.5:1 was determined to be a second-order ZnS Raman peak 34 scattered in the crystalline ZnS layer, and a broader range of Raman shift is shown in Figure S5. In the case of an increasing zinc doping concentration of 9:1, lattice distortion occurred as in the previous GI-XRD result, and crystallinity decreased.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…SnS 2 /Zn thin films were deposited using a showerhead-type ALD reactor. The precursors for tin sulfide thin film deposition via ALD include tetrakis-(dimethylamino)tin(IV) (TDMASn) and tin(IV) acetate, and precursors for zinc sulfide thin film deposition are diethy-zinc (DEZ) and bis(2,2,6),6-tetramethyl-3,5-heptanedionato)zinc (Zn(TMHD) 2 ). − In this work, we used TDMASn as a tin precursor, hydrogen sulfide (H 2 S) gas as a reactant, and DEZ as a zinc precursor. TDMASn was maintained at 50 °C, and DEZ was maintained at room temperature.…”

Section: Methodsmentioning

confidence: 99%

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Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

Choi

Kim

Lee

et al. 2022

ACS Appl. Nano Mater.

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Two-dimensional tin disulfide (SnS2) is attracting attention from researchers in various fields due to its physical, optical, and electrical properties. In addition, research suggests that SnS2 doped with various metals can be used in a wide range of applications. However, few studies of the doping process in tin sulfide thin films with various doping concentrations using atomic layer deposition (ALD) and the super-cycle method have been published. Here, we describe the deposition of pristine SnS2 using ALD and analyze crystallinity, chemistry, and optical and electrical properties of SnS2 doped with various concentrations of zinc by controlling the ratio of SnS2 and ZnS using super-cycle recipes. As the doping concentration increased, a cubic-phase ZnS layer was formed, and chemical binding energies increased, revealing an n-type doping effect. As the doping concentration increased, the transmittance of the thin film increased by up to 80.5%, and the optical band gap increased to 3.43 eV. In addition, the valence-band edge energy increased up to 2.02 eV, and n-type characteristics appeared as the doping concentration of zinc increased as determined by calculation of the electronic band structure. These zinc-doped nanoscale SnS2 materials have potential for optoelectronic applications.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

Choi

Kim

Lee

et al. 2022

ACS Appl. Nano Mater.

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“…Figure c,e shows the cutoff energy ( E cutoff ) at high binding energy for α-Fe 2 O 3 and Fe 1.6 In 0.4 O 3 NWs. The work function ( W F ) of one material is determined by eq 2: W F = h ν – | E cutoff – E f(Au) |, − where h ν and E f(Au) refer to the incident photon energy of He I UV source and E f of standard Au sample, respectively, which equal 21.22 and 0.07 eV in this test. Fermi levels of α-Fe 2 O 3 and Fe 1.6 In 0.4 O 3 NWs were calculated to be −3.94 and −3.64 eV.…”

Section: Resultsmentioning

confidence: 99%

In/Fe Cospinning Nanowires for Triethylamine Gas Sensing

Zhang

Wang

et al. 2022

ACS Appl. Nano Mater.

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Solid solution is a type of substance with rich physicochemical properties and significant internal adjustability. Thus, it has been widely used in various areas, including gas sensing. In this study, several In/Fe oxide solid solutions were successfully synthesized using the cospinning method and annealing process. Affirmatively, the solute In 3+ substituted the original host Fe 3+ in lattices of iron oxide, and vice versa. Thus, phases of α-(Fe 1−x In x ) 2 O 3 and C-(Fe 1−x In x ) 2 O 3 solid solutions appeared in sequence as the proportion of In 3+ increased. When In 3+ was introduced, composite nanowires (NWs) became porous, but when the amount of In 3+ was increased, the gas permeability worsened. When the amount of In 3+ became comparable to that of Fe 3+ in the precursor, abundant amorphous regions emerged in the product due to the mutual interference between the respective crystallization courses of In 3+ and Fe 3+ . Satisfactorily, the gassensing properties of as-synthesized samples maintained a close relationship with the composition and structure. For example, the product with the highest response and fastest response time toward the triethylamine detection had a 20.0 mol % ratio of In 3+ in the precursor. However, despite having a higher initial resistance, the sensor response was reduced by overproportioned amorphous phases caused by excessive In 3+ addition. Importantly, the response time of the optimal Fe 1.6 In 0.4 O 3 NWs was only 4 s, and recovery speeds of Fe 3+ -containing samples maintained a positive correlation with the gas permeability of products. Band stuctures of samples were obtained to give a reasonable explanation on the gas-sensitivity improvement. This study will promote the application of solid solutions to a gas-sensing area.

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“…Metal chalcogenide materials are considered as excellent absorber materials in photovoltaic cell applications [105,106]. These materials exhibited excellent absorption co-efficient and suitable band gap value to adsorb the maximum number of photons from sun radiation [107,108].…”

Section: Metal Sulphide Metal Telluride and Metal Selenide Thin Film ...mentioning

confidence: 99%

Recent Developments on the Properties of Chalcogenide Thin Films

Soonmin¹,

Paulraj²,

Kumar³

et al. 2022

Chalcogenides - Preparation and Applications

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Chalcogenide thin films have attracted a great deal of attention for decades because of their unique properties. The recent developments on thin film-based supercapacitor applications were reported. As a result of sustained efforts, the experimental findings revealed remarkable properties with enhanced fabrication methods. The properties of perovskite solar cells were discussed in terms of crystal structure and phase transition, electronic structure, optical properties, and electrical properties. Perovskite solar cell has gained attention due to its high absorption coefficient with a sharp absorption edge, high photoluminescence quantum yield, long charge carrier diffusion lengths, large mobility, high defect tolerance, and low surface recombination velocity. The thin film-based gas sensors are used for equally the identification and quantification of gases, and hence should be both selective and sensitive to a required target gas in a mixture of gases. Metal chalcogenide materials are considered excellent absorber materials in photovoltaic cell applications. These materials exhibited excellent absorption coefficient and suitable band gap value to absorb the maximum number of photons from sun radiation. The photovoltaic parameters were strongly dependent on various experimental conditions.

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Deposition of the tin sulfide thin films using ALD and a vacuum annealing process for tuning the phase transition

Cited by 20 publications

References 33 publications

Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

In/Fe Cospinning Nanowires for Triethylamine Gas Sensing

Recent Developments on the Properties of Chalcogenide Thin Films

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Deposition of the tin sulfide thin films using ALD and a vacuum annealing process for tuning the phase transition

Cited by 20 publications

References 33 publications

Tuning the Band Structure of Zn-Doped SnS2 Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

Tuning the Band Structure of Zn-Doped SnS2 Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

In/Fe Cospinning Nanowires for Triethylamine Gas Sensing

Recent Developments on the Properties of Chalcogenide Thin Films

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Product

Resources

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Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

Tuning the Band Structure of Zn-Doped SnS₂ Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices