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In this work, we report on the layered deposition of few-layer tin disulfide (SnS 2 ) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS 2 with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS 2 film (3-6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS 2 as the transport channel. SnS 2 devices showed typical n-type characteristic with on/off current ratio of ∼8.32×10 6 , threshold voltage of ∼2 V, and a subthreshold swing value of 830 mV decade −1 for the 6 layers SnS 2 . The developed SnS 2 ALD technique may aid the realization of two-dimensional SnS 2 based flexible and wearable devices.

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