Deposition of thick TEOS PECVD silicon oxide layers for integrated optical waveguide applications

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

“…It is well known that thick ͑Ͼ500 nm͒ plasma enhanced chemical vapor deposition ͑PECVD͒ SiO x films can suffer from severe microcracking, which occurs during high temperature annealing. [10][11][12] Under thermal treatment, the film shrinks due to removal of the hydrogen incorporated into the film during the deposition process. 10,[13][14][15] Conventional silane-based PECVD of silicon dioxide exploits the plasma dissociation of silane ͑SiH 4 ͒ and nitrous oxide ͑N 2 O͒ to form silicon and oxygen reactive species ͑ions and radicals͒ that react on the substrate surface to produce films of SiO 2 .…”

Structural analysis of silicon oxynitride films deposited by PECVD

“…There are many different techniques to obtain silicon oxynitride [1,3,6,13,17,18], but the PECVD technique is particularly interesting due to the possibility of a good control of the chemical composition and a wide range control of the deposition rate by changing the parameters of deposition at low temperatures (320 8C), very important characteristics for the integration of micro-opto-electromechanical structures (MOEMS) [9,[19][20][21][22][23].…”

Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applications

“…It is a good quality silicon based dielectric, it is obtained at temperatures around 300°C and it can be easily etched with acid solutions of HF and at the same time is highly resistant to KOH. Also it can present very low internal stress and therefore, it is possible to deposit very thick SiO x N y films and we ourselves have reported mechanically stable films with up to 10 lm thickness [4], which is a remarkable result since it is known that the PECVD films tend to scratch for thickness higher than 5 lm [5,6].…”