Structural analysis of silicon oxynitride films deposited by PECVD

Local bonding in PECVD-SiOxNy films

“…All the spectra present an absorption edge similar to Si 3 N 4 at approximately 399 eV, which is related to N-Si bonds. However, all the PECVD-samples present a resonance line (RL) in the absorption edge [14,15], approximately in 399.1 eV, which was already described in previous works [9]. This RL increases in intensity when higher oxygen content is present in the sample.…”

“…On the other hand, at the N-K edge the spectra showed a structure similar to the exhibited by Si 3 N 4 films, related to N-Si bonds in Si 3 N 4 type sites. However, a resonance line (RL) in the absorption edge, which increases in intensity for higher oxygen content in the sample, was also observed [9] which we attributed to Si-N bonds in Si-O-like sites, due to N substituting O in Si-O-Si bridges.…”

Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties

“…In a recent work we observed this resonance line in SiO x N y films with nitrogen concentration going from 0% (SiO 2 ) up to 55% (Si 3 N 4 ) and it was verified that the RL intensity increases for higher oxygen content in the sample. This result was attributed to N incorporating in SiO 2 type-sites, substituting oxygen vacancies in Si-O-Si bridges [22]. The O-K edge spectra are depicted in Fig.…”

Explosion characteristics of flammable organic vapors in nitrous oxide atmosphere

“…Nitrous oxide (N 2 O, a transparent and colorless gas at atmospheric pressure and room temperature) has been widely employed in semiconductor and electronics industries [1][2][3][4][5]. Moreover, N 2 O is used as a rocket propellant [6] since N 2 O acts as an oxidizer.…”