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MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 70 mA/cm2 for VG = 1V, acceptable for high performance logic circuits and low power circuits fabrication, indicating that this material is a viable substitute for current dielectric layers in order to prevent tunneling currents.

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