Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors

Albertin, K. F.; Pereyra, I.

doi:10.1016/j.tsf.2008.12.045

Cited by 31 publications

(15 citation statements)

References 26 publications

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“…As the substrate temperature increased to 673 K, the intensity of the absorption bands was increased. Albertin et al observed an absorption band at 440 cm − 1 related to the anatase phase in the TiO 2 films formed by sputtering of metallic titanium target in the mixture of argon and oxygen (35 %) atmosphere. The weak peak observed at 1107 cm − 1 in the films deposited at 303 K was due to the presence of Si–O band indicating the Si substrate.…”

Section: Resultsmentioning

confidence: 99%

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Sekhar

Kondaiah

Chandra

et al. 2012

Surface & Interface Analysis

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DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO 2 ) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6Â10 À2 Pa and at different substrate temperatures in the range 303 -673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures ≥ 473 K were transformed into polycrystalline nature with anatase phase of TiO 2 . Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO 2 . The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO 2 /p-Si sandwich structure was fabricated and performed current-voltage and capacitance-voltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8 Â 10 À6 to 5.4 Â 10 À8 A/cm 2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K.

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Section: Resultsmentioning

confidence: 99%

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Sekhar

Kondaiah

Chandra

et al. 2012

Surface & Interface Analysis

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“…Plasma column and nano-powder generation from solid titanium by localized microwaves in air I. INTRODUCTION Titanium dioxide (titania) in its various forms 1 is widely used, for instance, in applications related to air cleaning, [2][3][4] water purification, [5][6][7][8] photo-catalysts, [9][10][11][12][13][14] semiconductors, 15,16 solar energy conversion, 17,18 paints, pigments, 19,20 food coloring, and sunscreens. [21][22][23] Titania has three main types of crystalline polymorphs, namely, rutile, anatase, and brookite.…”

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confidence: 99%

Plasma column and nano-powder generation from solid titanium by localized microwaves in air

Popescu

Jerby

Meir

et al. 2015

Journal of Applied Physics

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International audienceThis paper studies the effect of a plasma column ejected from solid titanium by localized microwaves in an ambient air atmosphere. Nanoparticles of titanium dioxide (titania) are found to be directly synthesized in this plasma column maintained by the microwave energy in the cavity. The process is initiated by a hotspot induced by localized microwaves, which melts the titanium substrate locally. The molten hotspot emits ionized titanium vapors continuously into the stable plasma column, which may last for more than a minute duration. The characterization of the dusty plasma obtained is performed in-situ by small-angle X-ray scattering (SAXS), optical spectroscopy, and microwave reflection analyses. The deposited titania nanoparticles are structurally and morphologically analyzed by ex-situ optical and scanning-electron microscope observations, and also by X-ray diffraction. Using the Boltzmann plot method combined with the SAXS results, the electron temperature and density in the dusty plasma are estimated as ∼0.4 eV and ∼1019 m−3, respectively. The analysis of the plasma product reveals nanoparticles of titania in crystalline phases of anatase, brookite, and rutile. These are spatially arranged in various spherical, cubic, lamellar, and network forms. Several applications are considered for this process of titania nano-powder production

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“…The intensity of (110) Fourier transform infrared spectra (FTIR) of TiO 2 films deposited at different sputtering powers are shown in figure 3.2. The FTIR spectra of the films deposited at low sputtering power of 80 W showed a broad absorption band at 438 cm -1 related to the stretching vibration of Ti-O-Ti in anatase phase TiO 2 [20]. When sputter power increased to 120 W, the absorption bands at 494 and 668 were observed with minimum intensity.…”

Section: Resultsmentioning

confidence: 98%

Structural, Dielectric and Optical properties of Sputtered TiO2 nano-films

Thaidun¹

2013

IOSR-JAP

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Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors

Cited by 31 publications

References 26 publications

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Plasma column and nano-powder generation from solid titanium by localized microwaves in air

Structural, Dielectric and Optical properties of Sputtered TiO2 nano-films

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Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors

Cited by 31 publications

References 26 publications

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

Plasma column and nano-powder generation from solid titanium by localized microwaves in air

Structural, Dielectric and Optical properties of Sputtered TiO2 nano-films

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Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric