A capacitive MOSFET sensor using a SOI wafer for detecting vertical force applied to its floating gate is proposed. This sensor detects the displacement from changes in drain current, and this current can be amplified electrically by adding the voltage to the gate, i.e., MOSFET itself serves as mechanical sensor structure as shown in Fig. 1. By using a SOI wafer having a thick active silicon layer, a thick gate structure is made possible, which increases the sensitivity in accelerometer application by weighting a proof mass.The proposed fabrication process is shown in Fig. 2. Spincoating photoresist is not applicable due to the large step height of the gate structure on wafer surface. Therefore, spray coating method is employed. This method is commonly applied to slanted surfaces: however, there has been little research done in applying this method to a real vertical structure having a high aspect ratio in which the sidewall is over 100 µm in height. Basic performance of spray coating of photoresist on such structure is investigated. Figure 3 shows the results varying the moving speed of substrate. Although the speed is limited to 99 mm/s of the apparatus' maximum performance, the effect of increasing it on the photoresist uniformity is confirmed. It may be because if the speed of substrate were fast, fluctuating photoresist particles cannot stay in the neighborhood of the concave corner. Figure 4 shows the results varying the substrate temperature. The effect of increasing it on the photoresist uniformity is confirmed. It may be because if the substrate temperature were high, the particles are rapidly dry, which may effective in preventing them from migrating to the concave corner.A practical test device of MOSFET sensor is under development by using this method, and aluminum electrodes for drain, source and gate areas are successfully patterned as shown in Fig. 5.
MemberA capacitive MOSFET sensor using a SOI wafer for detecting vertical force applied to its floating gate is herein proposed. A MOSFET is fabricated on a SOI wafer, and the box oxide under the gate is removed to release the gate structure. This sensor detects the displacement of the movable gate electrode from changes in drain current, and this current can be amplified electrically by adding voltage to the gate, i.e., the MOSFET itself serves as a mechanical sensor structure. By using a SOI wafer having a thick active silicon layer, a thick gate structure is made possible, which increases the mechanical stiffness and durability, and increases the sensitivity in accelerometer application by weighting a proof mass. During the fabrication process of this sensor, it is necessary that photoresist be coated on the top-surface and sidewall of the vertical pillar structure with a high aspect ratio. To address this problem, photoresist is applied using spray coating. The uniform coating is successfully realized by adjusting the moving speed of the substrate, and the substrate temperature. A practical test device is under development using this method, and...