Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Suda, Reiji; Yagi, Mamiko; Kojima, Akira; Mentek, Romain; Mori, Nobuya; Shirakashi, Jun–ichi; Koshida, Nobuyoshi

doi:10.7567/jjap.54.04dh11

Cited by 5 publications

(9 citation statements)

References 39 publications

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“…n Fρ [12] This equation certainly corresponds to the deposition rate 10,11 deduced from Faraday's electrolysis law. Even in the electron incidence mode presented here, the stationary deposition rate converges on a common level with the dipping and dripping modes.…”

Section: Deposition Mechanismmentioning

confidence: 87%

“…Even in the electron incidence mode presented here, the stationary deposition rate converges on a common level with the dipping and dripping modes. [7][8][9][10][11][12] 7a and 7b show the calculated electron incidence time dependence of the deposition rate at different J e values and the corresponding deposited thin film thickness, respectively, for each material. In every case, the deposition rate rapidly increases at the initial stage of electron incidence, and then saturates shortly at about 0.1 s. The stationary value strongly depends on J e as expected.…”

Section: Deposition Mechanismmentioning

confidence: 99%

“…[2][3][4][5] Though dots and nanowires of metals are directly formed, serious problems remain in EBID: both the purity and the uniformity of deposited thin films are insufficient because of incorporation of decomposed species into thin films and irradiation damages during the process. 4,5 We have reported application of quasiballistic hot electron emission from nanocrystalline silicon (nc-Si) diode 6,7 to reductive thin film deposition in dipping, [8][9][10][11] dripping, 12 and incidence 13,14 modes. In the incidence mode, salt solutions such as CuCl 2 , SiCl 4 , and GeCl 4 containing an objective ion are coated (∼100 nm in thickness) on a target substrate, and then irradiated with emitted quasiballistic electrons through a pressure-controlled gas space.…”

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confidence: 99%

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Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Suda

Kojima

Koshida

2018

ECS J. Solid State Sci. Technol.

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Highly reducing activity of quasiballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode is verified in terms of liquid-phase thin film deposition. Incident electrons reduce positive ions in salt solutions coated on a target substrate, and then result in deposition of thin metal (Cu) and semiconducting (Si, Ge, and SiGe) films. This mechanism is investigated here throughout the process from electron incidence to thin film deposition. Thermodynamic criterion deduced from classical nucleation theory suggests that the output electron energy of the nc-Si emitter is suitable for promoting preferential reduction of target ions in solutions leading to the nuclei formation. In accordance with mass-transport analyses on generated nanoclusters, the most primary factor of thin film growth is the dose of incident electron. The formulated deposition rate rapidly increases and reaches a stationary value within 0.1 s after electron incidence. The theoretical dependency of the thin film thickness on the electron incidence time is consistent with the experimental results. Specific features of this scheme as an alternative approach for thin film deposition are discussed in comparison with the conventional dry and wet processes.

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Section: Deposition Mechanismmentioning

confidence: 87%

Section: Deposition Mechanismmentioning

confidence: 99%

mentioning

confidence: 99%

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Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Suda

Kojima

Koshida

2018

ECS J. Solid State Sci. Technol.

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“…Extremely thin layers involved in these studies have been quite prone to shunts. Possibly this could be avoided by using clean room fabrications [86].…”

Section: Discussionmentioning

confidence: 99%

“…Ballistic hot electrons injected into solutions with appropriate kinetic energies promoted preferential reduction of target ions with no by-products leading to nuclei formation for the thin film growth. Specific advantageous features of this clean, room-temperature, and power-effective process was described in contrast to the conventional dry and wet processes [86].…”

Section: −mentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018

AMSE

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Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

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Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

Koshida

Kojima

Ikegami

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Cited by 5 publications

References 39 publications

Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

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