Deposition of thin silicon layers on transferred large area graphene

Łupina, Grzegorz; Kitzmann, Julia; Lukosius, M.; Dąbrowski, J.; Wolff, A.; Mehr, W.

doi:10.1063/1.4858235

Cited by 16 publications

(14 citation statements)

References 27 publications

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“…This peak is associated with the existence of PMMA. 28 It is noticeable that the background noise increased around the D peak which is from the amorphous carbons on the surface. 29…”

Section: Raman Imagingmentioning

confidence: 99%

Determination of PMMA Residues on a Chemical-Vapor-Deposited Monolayer of Graphene by Neutron Reflection and Atomic Force Microscopy

Pambou

et al. 2018

Langmuir

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Chemical vapor deposition (CVD) is now a well-established method for creating monolayer graphene films. In this method, poly(methyl methacrylate) (PMMA) films are often coated onto monolayer graphene films to make them mechanically robust enough for transfer and further handling. However, it is found that PMMA is hard to remove entirely, and any residual polymers remaining can affect graphene's properties. We demonstrate here a method to determine the amount of PMMA remaining on the graphene sheet fabricated from CVD by a combined study of Raman scattering, atomic force microscopy, and neutron reflection. Neutron reflectivity is a powerful technique which is particularly sensitive to any interfacial structure, so it is able to investigate the density profile of the residual PMMA in the direction perpendicular to the graphene film surface. After the standard process of PMMA removal by acetone-IPA cleaning, we found that the remaining PMMA film could be represented as a two-layer model: an inner layer with a thickness of 17 Å and a roughness of 1 Å mixed with graphene and an outer diffuse layer with an average thickness of 31 Å and a roughness of 4 Å well mixed with water. On the basis of this model analysis, it was demonstrated that the remaining PMMA still occupied a significant fraction of the graphene film surface.

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“…This peak is associated with the existence of PMMA. 28 It is noticeable that the background noise increased around the D peak which is from the amorphous carbons on the surface. 29…”

Section: Raman Imagingmentioning

confidence: 99%

Determination of PMMA Residues on a Chemical-Vapor-Deposited Monolayer of Graphene by Neutron Reflection and Atomic Force Microscopy

Pambou

et al. 2018

Langmuir

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“…by e-beam) of materials onto CVD graphene results in a much more homogeneous layer even in the low thickness regime (few nm). 5,6 However, methods such as e-beam evaporation are often not compatible with large scale semiconductor device manufacturing. In contrast, both CVD and plasma enhanced CVD (PECVD) are widely accepted manufacturing methods.…”

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confidence: 99%

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Łupina

Strobel

Dąbrowski

et al. 2016

Applied Physics Letters

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Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film whereby a high crystalline quality of graphene is preserved.Ability to deposit uniform thin layers of insulators and semiconductors on graphene is of crucial importance for many envisioned applications of this material in advanced electronic and photonic devices.1 Si-graphene junctions are particularly interesting for graphene-based photodetectors, sensors, and high-frequency vertical heterojunction transistors.

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“…To understand the effectiveness of Ca 2 NaNb 4 O 13 − nanosheets, the dielectric response of our MNC device using dielectric layer of ≈6 nm, [(R 2 /C 3 ) 2 /R 2 ], has been compared to typical perovskites and transition metal oxides at comparable film thickness ( Figure ). [ 18,23,27–32 ] In contrast, thin films of BaTiO 3 and Ba 1‐ x Sr x TiO 3 suffer from size effect when the film thickness is decreased down to several nanometers. [ 33–35 ] The size effect undoubtedly destroys their prospective advantages by diminishing the dielectric responses and leakage current profiles.…”

Section: Resultsmentioning

confidence: 99%

Scalable Design of Two‐Dimensional Oxide Nanosheets for Construction of Ultrathin Multilayer Nanocapacitor

Khan

Kim

et al. 2020

Small

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(LB) approach at room temperature which is verified by cross-sectional high-resolution transmission electron microscopy (HRTEM). The resultant MNCs demonstrate a high capacitance of 40-52 µF cm −2 and low leakage currents down to 10 −5-10 −6 A cm −2. Such MNCs also possess complimentary in situ robust dielectric properties under high-temperature measurements up to 250 °C. Based on capacitance normalized by the thickness, the developed MNC outperforms state-of-the-art multilayer ceramic capacitors (MLCC, ≈22 µF cm −2 /5 × 10 4 nm) present in the market. The strategy is effective due to the advantages of facile, economical, and ambient temperature solution assembly.

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Deposition of thin silicon layers on transferred large area graphene

Cited by 16 publications

References 27 publications

Determination of PMMA Residues on a Chemical-Vapor-Deposited Monolayer of Graphene by Neutron Reflection and Atomic Force Microscopy

Determination of PMMA Residues on a Chemical-Vapor-Deposited Monolayer of Graphene by Neutron Reflection and Atomic Force Microscopy

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Scalable Design of Two‐Dimensional Oxide Nanosheets for Construction of Ultrathin Multilayer Nanocapacitor

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