Deposition of tin sulfide thin films from tin(iv) thiolate precursors

Structural properties and variable-range hopping conductivity of Cu2SnS3

“…Three peaks at 296 cm −1 , 336 cm −1 and 351 cm −1 presented in the Raman spectrum of all four samples are attributed to tetragonal CTS phase [15][16][17]. On the other hand, the peak at 231 cm −1 indicates the presence of Sn 2 S 3 phase in CTS1, CTS2 and CTS4 samples [18]. The peak at 160 cm −1 observed in the Raman spectrum of the CTS3 sample is attributed to SnS phase [17].…”

Deposition and characterization of Cu2SnS3 thin films by co-evaporation for photovoltaic application

“…The mode at 472 cm À 1 is a characteristic binary phases of Cu 2 S [13]. The mode at 71 cm À 1 is attributed to the binary phase of Sn 2 S 3 phase [14]. The low intensity mode at 127 cm À 1 , attributed to the binary phase of SnS [15].…”

Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

“…Single-source precursors in particular offer an advantageous route in CVD especially, as complicating factors such as pre-reaction in the vapour can be avoided [27]. SnS thin films have been deposited by CVD from thiocarbamate precursors such as Sn(S 2 CNEt 2 ) 4 [28,29]. (Sn(S 2 CNEt 2 ) 4 , tin thiolates and dithiolates [25,28,30], as well as from tribenzyl tin(IV) chloride-thiosemicarbazone compounds [23].…”

“…SnS thin films have been deposited by CVD from thiocarbamate precursors such as Sn(S 2 CNEt 2 ) 4 [28,29]. (Sn(S 2 CNEt 2 ) 4 , tin thiolates and dithiolates [25,28,30], as well as from tribenzyl tin(IV) chloride-thiosemicarbazone compounds [23]. We have previously reported the deposition of SnS thin films by AACVD using heteroleptic di-organo tin(IV) bis-dialykyldithiocarbamate complexes of formula [Sn(C 4 H 9 ) 2 (S 2 CN(RR') 2 ) 2 ] (R, R' = ethyl ; R = methyl, R' = butyl ; R, R' = butyl ; R = methyl, R' = hexyl) and [Sn(C 6 H 5 ) 2 (S 2 CN(RR') 2 ) 2 ] (R, R' = Et ; R = Me, R' = n-Bu ; R, R' = n-Bu; R = R' = Et) [31].…”