Deposition and characterization of Cu2SnS3 thin films by co-evaporation for photovoltaic application

Reddy, Tarun; Amiruddin, R.; Kumar, M.C. Santhosh

doi:10.1016/j.solmat.2015.06.049

Cited by 75 publications

(13 citation statements)

References 16 publications

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“…The optical band gaps are estimated to be 1.5 and 1.74 eV for the zincblende and wurtzite structures, respectively. The relatively large band gap of wurtzite-CTS is attributed to the lower symmetry. , These results are congruous with band-gap-energy values that have been reported previously for CTS. ,, …”

Section: Results and Discussionsupporting

confidence: 86%

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Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Heidariramsheh

Mirhosseini

Abdizadeh

et al. 2021

ACS Appl. Energy Mater.

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We investigate the use of simple nontoxic Cu 2 SnS 3 (CTS) nanoparticles (NPs) as low-cost dopant-free hole-transport materials (HTMs) a substitute for spiro-OMeTAD in an n-ip mesoscopic architecture of perovskite solar cells (PSCs). Besides, this work confirms the critical role of the crystalline phase of CTS NPs on the performance of the device. Using a facile one-pot heating-up procedure, pure zincblende and wurtzite structures of CTS NPs were obtained by sulfur element and thiourea as the sulfur source, respectively, and were dispersed in chloroform to make very stable nonpolar ink that is compatible with the perovskite. Nanoparticles with the wurtzite crystal phase showed much better photovoltaic performance compared to the zincblende phase with efficiencies of 13.01 and 7.87%, respectively. The efficiency of the reference solar cell using spiro-OMeTAD was 16.01%. Results from impedance spectroscopy and external quantum efficiency show that by switching from wurtzite-CTS to zincblende-CTS, the resistance of charge transfer at the perovskite/HTM interface is increased, which matches with the descending trend of fill factor of the corresponding cells. According to the morphological characteristics and electrical properties of HTM layers, the better performance of wurtzite-CTS in comparison with zincblende-CTS is due to two factors: (i) enhancement of the band-gap energy and alignment of the valance band maximum; and (ii) uniform smooth coverage of the perovskite film by monodispersed wurtzite-CTS NPs.

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Section: Results and Discussionsupporting

confidence: 86%

“…46,47 These results are congruous with band-gap-energy values that have been reported previously for CTS. 46,52,59 An advantage of the heat-up synthesis of colloidal NPs using OAm is the easy dispersion in nonpolar solvents such as chloroform. The FTIR spectra were investigated to detect the interactions between OAm and CTS NPs.…”

Section: Resultsmentioning

confidence: 99%

Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Heidariramsheh

Mirhosseini

Abdizadeh

et al. 2021

ACS Appl. Energy Mater.

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“…The analysis of the Cu 2p signal is in agreement with the deconvolution of the S 2p signal consisting of three components, assigned to sulfides, elemental sulfur, and sulfates [69,70]. The signal at BE∼162 eV is characteristic of S 2− state of sulfur atoms [71][72][73]76]. Furthermore, the separation of binding energy between the S 2p 3/2 and Cu 2p 3/2 transitions (ΔE) is an important parameter that facilitates differentiation of Cu 2 S from CuS phases in the films prepared at lower sulfurization temperatures [77].…”

Section: Synthesis and Morphology Of Deposited Materialssupporting

confidence: 76%

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Witkowski¹,

Starowicz²,

Ziȩba³

et al. 2022

Nanotechnology

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In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the Atomic Layer Deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnCl4 was used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSx layer. The co-deposition of copper and tin sulfides components at 150C resulted in the in-process formation of the film containing Cu2SnS3, Cu3SnS4 and π-SnS phases. The process involving only tin precursor and H2S did not produce the SnSx species. The spectroscopic characteristic of the obtained materials were confronted with the literature survey, allowing us to discuss the methodology of the determination of ternary and quaternary sulfides purity by Raman spectroscopy. Moreover, the material characterisation with respect to the morphology (SEM), phase composition (XRD), surface chemical states (XPS), optical properties (UV-vis-NIR spectroscopy) and electric (Hall measurements) properties were provided. Finally, the obtained material was used for the formation of the p-n junction revealing the rectifying I-V characteristics.

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“…The Raman signature of the CZGTS series is sharper with the indication of the A 2 mode under excitation by the 532 nm laser. The presence of secondary phases, such as CGS (321, 360, and 384 cm −1 ) and CTS (285 and 332 cm −1 ), cannot be excluded due to the broad Raman peaks of the precursors. In contrast, the presence of ZnS on surface of all precursors is not confirmed due to the absence of quasi‐resonant excitations of ZnS vibrational modes under an excitation wavelength of 325 nm …”

Section: Resultsmentioning

confidence: 99%

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Saini

Larsen

Sopiha

et al. 2019

Physica Status Solidi (a)

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Alloying of Cu2ZnSnS4 (CZTS) with Ge can potentially promote grain growth and suppress the formation of Sn‐related defects. Herein, a two‐step fabrication route based on compound co‐sputtering and sulfurization at a high temperature is used to prepare Ge‐incorporated CZTS (Cu2ZnGexSn1 − xS4 [CZGTS]). For Cu2ZnGeS4 (CZGS), films deposited using elemental Ge and binary GeS targets are compared. The recrystallization is shown to be promoted for the absorbers deposited using Ge target, possibly due to lower sulfur content in the precursor suppressing the formation of wurtzite‐like phases during sputtering. The grain growth and crystallinity in CZGTS are slightly improved for x = 0.2 but not for higher concentration of the incorporated Ge. Owing to the composition‐dependent electronic properties, compositionally graded CZGTS films may be beneficial for reducing recombination towards the back contact. Hence, herein, the successful formation of a steep concentration gradient with Ge and Sn is demonstrated by the deposition of a CZGS/CZTS precursor stack followed by sulfurization with varying time periods.

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Deposition and characterization of Cu2SnS3 thin films by co-evaporation for photovoltaic application

Cited by 75 publications

References 16 publications

Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

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Deposition and characterization of Cu2SnS3 thin films by co-evaporation for photovoltaic application

Cited by 75 publications

References 16 publications

Evaluating Cu2SnS3 Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Evaluating Cu2SnS3 Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Germanium Incorporation in Cu2ZnSnS4 and Formation of a Sn–Ge Gradient

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Product

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Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Evaluating Cu₂SnS₃ Nanoparticle Layers as Hole-Transporting Materials in Perovskite Solar Cells

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient