2010
DOI: 10.1149/1.3270470
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Deposition Processes in the Metallorganic Chemical Vapor Deposition of CeO[sub 2] Films

Abstract: This research examines the metallorganic chemical vapor deposition process using tetrakis(3-methyl-3-pentoxy)cerium, Ce[OC(normalC2normalH5)2CH3]4 , as a source material to prepare CeO2 films by two different mass spectrometric techniques: ionization by Li+ ion attachment and electron impact. The reaction by-products of (normalC2normalH5)2C=CH2 and normalH2O , respectively resulting from the pyrolysis of the source material and the dehydration reaction at the sticking of the precursor on the substrate … Show more

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Cited by 4 publications
(3 citation statements)
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“…Among various deposition techniques, the sputtering deposition and MOCVD (metal organic chemical vapour deposition) are widely used in the LSI manufacturing (6). We have reported CeO2 film properties as a high-k material prepared by MOCVD, pyrolysis of the organic Ce source, Tetrakis (3-methyl-3-pentoxy)Ce (7)(8)(9). Cerium dioxide, however, has a strong tendency to crystallize even at room temperature deposition by the sputtering (10)(11)(12).…”
Section: Introductionmentioning
confidence: 99%
“…Among various deposition techniques, the sputtering deposition and MOCVD (metal organic chemical vapour deposition) are widely used in the LSI manufacturing (6). We have reported CeO2 film properties as a high-k material prepared by MOCVD, pyrolysis of the organic Ce source, Tetrakis (3-methyl-3-pentoxy)Ce (7)(8)(9). Cerium dioxide, however, has a strong tendency to crystallize even at room temperature deposition by the sputtering (10)(11)(12).…”
Section: Introductionmentioning
confidence: 99%
“…Cerium dioxide (CeO 2 ) is a promising material for its high dielectric constant of 26 (1), low lattice mismatch of 0.35% with Si and chemical stability. In our previous work (2), we reported the deposition characteristics of CeO 2 thin films by metal organic chemical vapor deposition (MOCVD) with a liquid organic source, tetrakis(3-methyl-3-pentoxy)Cerium. The deposition rate by the simple pyrolysis of the source material represented the Arrehenius behavior with two activation energies of 0.85 and 0.29 eV at lower and higher temperatures, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9][10][11][12] Starting from the pioneering research on Ce inhibition ability, [13][14][15] a large variety of solutions were utilized in chemical and physical deposition routes to ceria conversion coatings (CeCC): nitrate, 9,16-20 chloride, 3,4,[21][22][23] spray-drain cycles, magnetron sputtering and chemical vapour deposition were also reported. [24][25][26][27] Common features appeared in most methods: substrate de-oxidation/activation, as a necessary pretreatment step, followed by CeCCs formation, proceeding via several successive steps.…”
mentioning
confidence: 99%