Depth profile investigation of β-FeSi2 formed in Si(100) by high fluence implantation of 50keV Fe ion and post-thermal vacuum annealing

Lakshantha, Wickramaarachchige J.; Kummari, Venkata C.; Reinert, Tilo; McDaniel, F. D.; Rout, B.

doi:10.1016/j.nimb.2014.02.024

Cited by 8 publications

(6 citation statements)

References 21 publications

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“…This allows the surface sputtering of the implanted target to be included in all subsequent histories, thus allowing for far greater accuracy in low energy, high fluence ion implantation scenarios. Depth profiles for various fluence and energy combinations were developed using the SDTRIMSP (version 5.00) package [8] as a means of effectively optimizing a synthesizing process. For comparison to traditional TRIM [9] simulations, Table 1 below details light ion implantation vs heavy ion implantation using TRIM and SDTRIMSP for 50 keV ions implanted at a 7° tilt angle with the normal to the surface to reduce ion channeling.…”

Section: Simulation Methodsmentioning

confidence: 99%

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

Holliday

Young

Singh

et al. 2020

J. Nucl. Phy. Mat. Sci. Rad. A.

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By increasing the Sn concentration in Ge1-ySny and Ge1-x-ySixSny systems, these materials can be tuned from indirect to direct bandgap along with increasing electronic and photonic properties. Efforts have been made to synthesize Sn-Ge and Ge-Si-Sn structures and layers to produce lower energy direct bandgap materials. Due to low solid solubility of Sn in Ge and Si-Ge layers, high concentrations of Sn are not achieved by traditional synthesis processes such as chemical vapor deposition or molecular beam epitaxy. Implantation of Sn into Si-Ge systems, followed by rapid thermal annealing or pulse laser annealing, is shown to be an attractive technique for increasing Sn concentration, which can increase efficiencies in photovoltaic applications. In this paper, dynamic ion-solid simulation results are presented. Simulations were performed to determine optimal beam energy, implantation order, and fluence for a multi-step, ion-implantation based synthesis process.

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Section: Simulation Methodsmentioning

confidence: 99%

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

Holliday

Young

Singh

et al. 2020

J. Nucl. Phy. Mat. Sci. Rad. A.

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“…The selection of the ion energy is such that the differences between the R p are about ~10-30 nm according to the widely used SRIM. We have also used a Dynamic Monte Carlo program or T-DYN based on the static TRIM program [26,27]. In contrast to the static version, the T-DYN also simulates the dynamic change of surface position due to sputtering and/or deposition of the targets during high uence ion implantation.…”

Section: Methodsmentioning

confidence: 99%

Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

Dhoubhadel

Rout

Lakshantha

et al. 2014

AIP Conference Proceedings

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Articles you may be interested inResistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature Appl. Phys. Lett. 104, 092903 (2014) were sequentially implanted into Si(100) to create a distribution of different sizes and densities of buried metal nanoclusters (NC) at the near-surface layers. These structures have applications in fields involving plasmonics, optical emitters, photovoltaic, and nano-electronics. The dimension, location and concentration of these NCs influence the type of the applications. The implantation profiles were simulated by utilizing the widely used Stopping and Range of Ions in Matter (SRIM) code as well as a dynamic-TRIM code, which accounts for surface sputtering. The implanted samples were subsequently annealed either in a gas mixture of 4% H 2 + 96% Ar or in vacuum at a temperature ~500 ºC up to 90 minutes. The annealing was carried out below the eutectic temperature (~ 841 ºC) of Ag-Si to preferentially synthesize Ag NCs in Si rather than silicide. In order to study the size, concentration and distribution of the Ag NCs in Si, the samples were characterized by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) in combination with Ar-ion etching, and Transmission Electron Microscopy (TEM) techniques. The annealed samples showed a preferential distribution of the Ag NCs' sizes up to 10 nm either near the surface region (< 25nm) or at deeper layers (60-80 nm) closer to the interface of the implanted layer with the crystalline Si substrate. Ag NCs of larger diameters (up to 15 nm) were seen in the annealed sample near the peak concentration positions (~35-55 nm) of the implanted Ag ions. We have investigated the optical absorption properties due to these nano-structures in Si. The multiple energy implanted samples annealed in a gas mixture of 4% H 2 + 96% Ar show enhancements in the optical absorption in the visible range.

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“…В рабо-те [15], где была проведена имплантация монокристалла кремния ионами железа с энергией 50 кэВ и дозой 2.16 · 10 17 см −2 , напротив, расчет концентрации с помо-щью TRIM дает значения, превышающие эксперимен-тальные данные более чем в 2 раза.…”

Section: результаты и обсуждениеunclassified

“…В работах [13][14][15] при имплантации тяжелых ионов (золото, железо, ксенон) с энергиями 50−70 кэВ в монокристалл и в оксид кремния расхождение между средними проективными пробегами, определенными в эксперименте и рассчитанными с помощью программы SRIM-2013 (TRIM) [16,17], составило от 40 до 50%, а для энергии 300 кэВ эта разница составила 14%. Также при имплантации тяжелых ионов в углерод с энергиями от 10 до 300 кэВ экспериментальные значения средних проективных пробегов оказались выше рассчитанных в TRIM на 20−40% [12].…”

Section: Introductionunclassified

“…Экспериментальные данные были сопоставлены с расчетами, полученными с помощью программы TRIM. Выбор ионов железа для модификации кремния обуслов-лен тем, что этот материал обладает перспективными магнитными и оптическими свойства [15,22,23].…”

Section: Introductionunclassified

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Изучение Профиля Распределения Железа, Имплантированного В Кремний

Кожемяко¹,

Балакшин²,

Шемухин³

et al. 2017

Физика И Техника Полупроводников

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Проведена имплантация ионов железа с энергиями 90, 250 кэВ и дозой облучения 10 16 см −2 в моно-кристалл кремния с ориентацией (110). Методом резерфордовского обратного рассеяния в сочетании с каналированием изучены профили распределения внедренной примеси, а также профили распределения радиационных дефектов в кристаллической решетке. Экспериментальные результаты сравниваются с результатами моделирования в программе TRIM. Показано, что при энергии 4.6 кэВ/нуклон средние проективные пробеги совпадают, однако при энергии 1.6 кэВ/нуклон различие составляет 35%. Кроме того показано, что расчет некорректно учитывает дозовую зависимость при энергиях 1.6−4.6 кэВ/нуклон.

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Depth profile investigation of β-FeSi2 formed in Si(100) by high fluence implantation of 50keV Fe ion and post-thermal vacuum annealing

Cited by 8 publications

References 21 publications

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

Изучение Профиля Распределения Железа, Имплантированного В Кремний

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