1997
DOI: 10.1016/s0257-8972(97)00013-3
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Depth profile of residual stress in metal-ion implanted TiN coatings

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Cited by 67 publications
(29 citation statements)
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“…18 Amorphization has been reported to occur after ion implantation of PVD TiN, 19,20 whereas no such response has been seen for CVD material implanted with a range of ions. 12,21,22 Since amorphization due to ion bombardment occurs in response to the accumulation of the damage produced (e.g., the formation of vacancies and interstitials by the displacement of target atoms) this is consistent with the lower baseline defect levels present in CVD coatings. However, it must be questioned whether it is possible to amorphize a material such as TiN in which the bonding is substantially metallic.…”
Section: Introductionmentioning
confidence: 59%
See 1 more Smart Citation
“…18 Amorphization has been reported to occur after ion implantation of PVD TiN, 19,20 whereas no such response has been seen for CVD material implanted with a range of ions. 12,21,22 Since amorphization due to ion bombardment occurs in response to the accumulation of the damage produced (e.g., the formation of vacancies and interstitials by the displacement of target atoms) this is consistent with the lower baseline defect levels present in CVD coatings. However, it must be questioned whether it is possible to amorphize a material such as TiN in which the bonding is substantially metallic.…”
Section: Introductionmentioning
confidence: 59%
“…Details of the x-ray diffraction measurement methods applied to these samples can be found elsewhere. 22 Nanoindentation experiments were performed using a Nanoindenter II (Nanoinstruments, Knoxville, TN) fitted with a Berkovich diamond indenter. Peak loads in the range 1 to 500 mN were used and the hardness obtained from the unloading part of the load-displacement curves using the method of Oliver and Pharr.…”
Section: Methodsmentioning
confidence: 99%
“…Therefore, whole diffraction patterns can be measured at a low and nearly constant penetration depths. Consequently, GAXRD is a technique suitable to study depth profiles of structure parameters near the sample surface, because X-ray diffraction yields the mean values of structure parameters averaged over the whole layer thickness taking into account the absorption of radiation [8] …”
Section: Overview Of Experimental Techniquesmentioning
confidence: 99%
“…[18][19][20], which is signifi- cantly shallower than the predicted range of He ions (1000 nm) according to the SRIM calculations. Although we estimate X-ray penetration depth using both the critical angle formula [21] and the geometric method [22], we must state these are only estimated. Upon He ion irradiation, all the diffraction peaks remained as in the pristine SrTiO 3 GIXRD patterns and no apparent diffuse scattering is observed, indicating that SrTiO 3 are not undergoing amorphous at a peak radiation dose of 5 dpa.…”
Section: +mentioning
confidence: 99%