Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Umana‐Membreno, Gilberto A.; Kala, H; Antoszewski, J.; Ye, Z.H.; Hu, Weida; Ding, Rui; Chen, X.S.; Lü, Wei; Li, He; Dell, John; Faraone, Lorenzo

doi:10.1007/s11664-013-2659-z

Cited by 24 publications

(12 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Photodetectors, part of the technical foundation of our information society, are widely used in communications, imaging, sensing and other applications [1]. Many different photodetectors, with different materials and structures, have been reported in recent years [2,3,4,5]. For these different photodetectors, the range of light detection depends on the light-absorbing materials, whose ability to absorb light is determined by their band structures.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Chen

et al. 2019

Materials

View full text Add to dashboard Cite

The excellent optoelectronic properties of graphene give it great potential for applications in optical detection. Among the graphenes obtained through many synthetic methods, epitaxial graphene obtained by thermal decomposition on silicon carbide has remarkable advantages for preparing photodetectors. In this research, epitaxial graphene has been successfully prepared on a silicon surface (0001) of semi-insulating 4H-SiC substrate with a size of 10 mm × 10 mm and epitaxial graphene has been converted to quasi-free-standing graphene by hydrogen passivation. Two metal-graphene-metal photodetectors were fabricated using the two types of graphenes above and the photo-absorption properties of detectors have been investigated under 650-nm laser illumination with different illumination powers. From a comparison of the performances between the two detectors, it was found that a photodetector fabricated with quasi-free-standing graphene shows enhanced performance under a light power of 0.018 mW. Responsivity and external quantum efficiency reach maxima of 5.11 A/W and 9.74%, respectively. This dramatic improvement is mainly due to the disappearance of the buffer layer in epitaxial graphene, providing a new method to achieve optimization of graphene-based opto-electrical devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Chen

et al. 2019

Materials

View full text Add to dashboard Cite

show abstract

“…However, the lattice matched substrates with MCT as ZnCdTe are more expensive than III-V substrates and also the growing of MCT structures with low dislocation density on Si or GaAs as alternate substrates have some difficulties. 23 InGaAs along with HgCdTe (MCT) has also been extensively studied with a great potential for the infrared detector applications [24][25][26][27][28][29][30][31][32] such as metal-semiconductor-metal (MSM) photodetectors. [33][34][35] InGaAs detector performance agrees with that of MCT in the 1.5-3.7 lm wavelength range due to similar semiconductor band structures.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Asar

Özçelik

Özbay

2014

Journal of Applied Physics

View full text Add to dashboard Cite

Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current–voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications.

show abstract

“…Planar n-on-p HgCdTe photovoltaic device with a photosensitive area of 100×100 μm 2 is prepared experimentally, and the device structure is shown in Figure 1(a), where the p-type HgCdTe material is a Hg vacancy-dominated epitaxial LPE thin-film material with a concentration of Na=1×10 18 cm -3 in the p-region. HgCdTe material is formed by epitaxially growing on the CdZnTe substrate in the (111) crystal direction [10,11] , where the n-region doping concentration Nd = 2×10 18 cm -3 is achieved by boron ion injection, and a lower doping concentration Nd = 1 × 10 15 cm -3 can be formed in the n-region by post-annealing treatment. The ZnS/CdTe passivation layer is grown on the surface of the device, which can be used as a barrier layer for ion injection to reduce the lattice damage to the material by injection, and effectively reduces the surface complexation of the device and reduces the surface dark current.…”

mentioning

confidence: 99%

Two-dimensional modeling of the saturation characteristics of laser irradiation on HgCdTe mid-wave infrared photovoltaic devices

maosheng

Yang

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

View full text Add to dashboard Cite

The laser response of HgCdTe medium-wave photovoltaic device is numerically simulated in this research. The simulations are carried out by considering the carrier electrical properties and a simulation model is obtained, and simulation results are in general conformity with the experimental results under both strong and weak illumination. The saturation threshold increases as the operating temperature of the device decreases, according to the current response characteristics of the device. The contact resistance of device is calculated and discussed, and the optimized device structure are given to point out the direction of parameter optimization. Furthermore, two-dimensional simulations demonstrate that the electrode size and composition gradient and reverse voltage has a considerable impact on the photocurrent, which is an essential problem to address in the development of high saturation threshold mid-wave infrared HgCdTe photovoltaic devices.

show abstract

Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Cited by 24 publications

References 22 publications

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Two-dimensional modeling of the saturation characteristics of laser irradiation on HgCdTe mid-wave infrared photovoltaic devices

Contact Info

Product

Resources

About